MJD31CAJ
NPN Bipolar Junction Transistor with Automotive Grade Quality
数量 | 単価(USD) | 合計金額 |
---|---|---|
5 | $0.275 | $1.38 |
50 | $0.222 | $11.10 |
150 | $0.200 | $30.00 |
500 | $0.171 | $85.50 |
2500 | $0.158 | $395.00 |
5000 | $0.151 | $755.00 |
在庫:6,766
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJD31CAJ
-
パッケージ/ケース : TO-252-3
-
Brand : Nexperia USA Inc.
-
Components Classification : Single Bipolar Transistors
-
日付シート : MJD31CAJ データシート (PDF)
-
Series : MJD31CA
概要 MJD31CAJ
Product MJD31CAJ is a top-of-the-line silicon NPN Darlington power transistor that caters to high voltage applications. Boasting a maximum collector-emitter voltage of 100V, a collector current of 3A, and a power dissipation of 30W, this transistor is engineered for optimal performance. Encased in a TO-252 package, it is tailor-made for surface mount applications, ensuring seamless integration into electronic devices
主な特長
- High reliability and durability
- Rugged construction
- Fully tested and qualified
- Compliant with industry standards
応用
- Continuous current supply
- Smart power management
- Noise-free relay control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3 A | Voltage - Collector Emitter Breakdown (Max) | 100 V |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | Current - Collector Cutoff (Max) | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 4V | Power - Max | 1.6 W |
Frequency - Transition | 3MHz | Operating Temperature | 150°C (TJ) |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK | Base Product Number | MJD31 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![MJ802](/files/uploads/product/s/7ef44efcf4e64c359d38f6c32762a303.webp)
MJ802
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Bag
![MJD44H11G](/files/uploads/product/s/032174501b2949b08d53dc7036faeb5d.webp)
MJD44H11G
SILICON PLASTIC/EPOXY 2 PIN TRANSISTOR
![MJD3055T4G](/files/uploads/product/s/26c03a7d587644ee865266fba4b7a14f.webp)
MJD3055T4G
Transistor, General Purpose NPN Bipolar Junction, 60 Volts, 10 Amperes, 3-Pin with 2 Tabs, DPAK Package, Tape and Reel
![MJD44H11T4G](/files/uploads/product/s/1b854609343e47148bb0c6bcc525d4c4.webp)
MJD44H11T4G
MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1
![MJ11029](/img/package/to-3.jpg)
MJ11029
Bipolar Power Darlington Transistors for use in general purpose amplifiers
![MJ11030](/img/package/to-3.jpg)
MJ11030
The Bipolar Power Darlington Transistors featured in this product are specifically suited for complementary general purpose amplifier applications
![MJ14002](/img/package/to3.jpg)
MJ14002
ROHS TO-204 Bipolar Transistors
![MJB44H11T4-A](/img/package/d2pak.jpg)
MJB44H11T4-A
Trans GP BJT NPN 80V 10A 50000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
![MJH6287](/img/package/sot3.jpg)
MJH6287
MJH6287 is a silicon-based power bipolar transistor designed with a maximum collector current of 20A and a breakdown voltage of 100V
![MJF18008](/img/package/to-220f.jpg)
MJF18008
Bipolar Power Transistor MJF18008, featuring an 8.0 A current capacity and 450 V voltage rating
![AOTF2210L](/img/package/to220f.jpg)
AOTF2210L
Power transistor for electronic circuits
![SSM2220SZ](/img/package/soic8.jpg)
SSM2220SZ
8-Pin SOIC Packaged PNP Bipolar Transistor for General Purpose Applications
![IRG4PC50FDPBF](/img/package/to247.jpg)
IRG4PC50FDPBF
Infineon Insulated Gate Bipolar Transistor
![2STA1962](/img/package/to-3.jpg)
2STA1962
TO-3P Power Transistor, PNP Silicon, 15 Amperes, 230 Volts, RoHS Compliant
![SPP20N60C3XKSA1](/img/package/to220.jpg)
SPP20N60C3XKSA1
MOSFET transistor capable of handling 650 volts and 20.7 amps in TO220-3 configuration
![MUN5232DW1T1G](/img/package/sc70.jpg)
MUN5232DW1T1G
BRT Dual NPN Bipolar Digital Transistor MUN5232DW1T1G
![ACS302-5T3](/img/package/soic20.jpg)
ACS302-5T3
20-pin small outline (SO) tube package for easy installation
![IKQ75N120CH3XKSA1](/img/package/to247.jpg)
IKQ75N120CH3XKSA1
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package
![IPB64N25S320ATMA1](/img/package/d2pak3.jpg)
IPB64N25S320ATMA1
High-performance IPB64N25S3 Series Power Transistor with 64 A current capacity
![NPT25100B](/img/package/to3.jpg)
NPT25100B
RF Power Transistor NPT25100B Specifications"