MJE172
Trans GP BJT NPN 80V 3A 12500mW 3-Pin(3+Tab) SOT-32 Tube
在庫:2,156
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJE172
-
パッケージ/ケース : SOT-32-3
-
ブランド : Onsemi
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : MJE172 データシート (PDF)
-
Series : MJE172
概要 MJE172
The MJE170/180 series from MJE Electronics is a top choice for those seeking low power audio amplification and high-speed switching capabilities. With both PNP (MJE170/171/172) and NPN (MJE180/181/182) options available, this series offers a versatile solution for a wide range of applications
主な特長
- Collector-Emitter Sustaining Voltage -
VCEO(sus) = 60 Vdc - MJE171, MJE181
VCEO(sus) = 80 Vdc - MJE172, MJE182 - DC Current Gain -
hFE = 30 (Min) @ IC = 0.5 Adc
hFE = 12 (Min) @ IC = 1.5 Adc - Current-Gain - Bandwidth Product -
fT = 50 MHz (Min) @ IC = 100 mAdc - Annular Construction for Low Leakages -
ICBO = 100 nA (Max) @ Rated VCB - Pb-Free Packages are Available
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-32-3 |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.7 V |
Maximum DC Collector Current | 3 A | Pd - Power Dissipation | 12.5 W |
Gain Bandwidth Product fT | 50 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Series | MJE172 |
Brand | STMicroelectronics | Continuous Collector Current | 3 A |
DC Collector/Base Gain hfe Min | 50 | DC Current Gain hFE Max | 250 |
Height | 10.8 mm | Length | 7.8 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 4000 |
Subcategory | Transistors | Technology | Si |
Width | 2.7 mm | Unit Weight | 0.002116 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![MJ802](/files/uploads/product/s/7ef44efcf4e64c359d38f6c32762a303.webp)
MJ802
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Bag
![MJD44H11G](/files/uploads/product/s/032174501b2949b08d53dc7036faeb5d.webp)
MJD44H11G
SILICON PLASTIC/EPOXY 2 PIN TRANSISTOR
![MJD3055T4G](/files/uploads/product/s/26c03a7d587644ee865266fba4b7a14f.webp)
MJD3055T4G
Transistor, General Purpose NPN Bipolar Junction, 60 Volts, 10 Amperes, 3-Pin with 2 Tabs, DPAK Package, Tape and Reel
![MJD44H11T4G](/files/uploads/product/s/1b854609343e47148bb0c6bcc525d4c4.webp)
MJD44H11T4G
MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1
![MJ11029](/img/package/to-3.jpg)
MJ11029
Bipolar Power Darlington Transistors for use in general purpose amplifiers
![MJ11030](/img/package/to-3.jpg)
MJ11030
The Bipolar Power Darlington Transistors featured in this product are specifically suited for complementary general purpose amplifier applications
![MJ14002](/img/package/to3.jpg)
MJ14002
ROHS TO-204 Bipolar Transistors
![MJB44H11T4-A](/img/package/d2pak.jpg)
MJB44H11T4-A
Trans GP BJT NPN 80V 10A 50000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
![MJH6287](/img/package/sot3.jpg)
MJH6287
MJH6287 is a silicon-based power bipolar transistor designed with a maximum collector current of 20A and a breakdown voltage of 100V
![MJF18008](/img/package/to-220f.jpg)
MJF18008
Bipolar Power Transistor MJF18008, featuring an 8.0 A current capacity and 450 V voltage rating
![PHT6N06T](/img/package/sot223.jpg)
PHT6N06T
PHT6N06T, N-channel MOSFET Transistor 5.5 A 55 V, 4-Pin SC-73
![LM3046M/NOPB](/img/package/soic14.jpg)
LM3046M/NOPB
LM3046M/NOPB represents a transistor array housed in a 14-SOIC package
![2SJ201-Y](/img/package/to220.jpg)
2SJ201-Y
Discontinued Phase-Out Obsolete
![2N6251](/files/uploads/product/s/12ef97e7cbb34a219ed9763d52c9186b.webp)
2N6251
Ideal for switching and amplification circuits requiring low saturation voltage
![MPSA92G](/img/package/to92.jpg)
MPSA92G
Transistor MPSA92G: PNP type, designed for small signal applications, housed in TO-92 (TO-226) packaging with a body height of 5
![FGA180N33ATDTU](/img/package/to3pn.jpg)
FGA180N33ATDTU
180A current capability with 390mW power dissipation
![FB15R06KL4](/img/package/module.jpg)
FB15R06KL4
N-Channel Module-23
![KSE13009](/img/package/to220.jpg)
KSE13009
12A I(C), 400V V(BR)CEO, Power Bipolar Transistor, NPN, Silicon, TO-220AB, Plastic/Epoxy
![SIA440DJ-T1-GE3](/img/package/sc70.jpg)
SIA440DJ-T1-GE3
MOSFET 40V Vds 12V Vgs PowerPAK SC-70
![FJT44KTF](/img/package/sot223.jpg)
FJT44KTF
NPN Transistor with Silicon Epitaxial Layer