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MUN5211DW1T1G

MUN5211DW1T1G is a SOT-363 NPN-Pre-Biased Digital Transistor with 2V and 100mA

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概要 MUN5211DW1T1G

The MUN5211DW1T1G is an innovative digital transistor that is part of a series designed to simplify circuit design and reduce component count. With its integrated bias network of two resistors, this Bias Resistor Transistor (BRT) eliminates the need for external resistor bias networks, streamlining the manufacturing process and saving valuable board space. By replacing a single device and its external components, the MUN5211DW1T1G offers a cost-effective solution for electronic applications requiring transistor functionality

主な特長

  • Faster Time-to-Market
  • Simplified Manufacturing Process
  • Improved Reliability

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA Power - Max 250mW
Mounting Type Surface Mount Package / Case SOT-363-6
Supplier Device Package SC-88/SC70-6/SOT-363 Base Product Number MUN5211
Manufacturer onsemi Product Category Bipolar Transistors - Pre-Biased
RoHS Details Configuration Dual
Transistor Polarity NPN Typical Input Resistor 10 kOhms
Mounting Style SMD/SMT DC Collector/Base Gain hfe Min 35
Collector- Emitter Voltage VCEO Max 50 V Continuous Collector Current 100 mA
Peak DC Collector Current 100 mA Pd - Power Dissipation 187 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series MUN5211DW1 Brand onsemi
DC Current Gain hFE Max 35 Height 0.9 mm
Length 2 mm Product Type BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity 3000 Subcategory Transistors
Width 1.25 mm Unit Weight 0.000423 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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