NVTFS5116PLTWG
Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R
在庫:8,406
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部品番号 : NVTFS5116PLTWG
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パッケージ/ケース : WDFN-8
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ブランド : onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : NVTFS5116PLTWG データシート (PDF)
概要 NVTFS5116PLTWG
Revolutionize your automotive designs with the NVTFS5116PLTWG, a powerhouse MOSFET packed in a compact 3x3mm flat lead package. Its high thermal performance ensures optimal efficiency in even the most demanding applications, making it a standout choice for automotive designers. The Wettable Flank Option provides enhanced optical inspection capabilities, ensuring top-notch quality control during production. And with AEC-Q101 qualification and PPAP capability, this MOSFET is a safe and reliable choice for automotive applications that demand excellence
主な特長
- High Speed Operation
- Low Capacitance
- Small Footprint (3.2 x 2.8 mm)
- AEC−Q101 Qualified and PPAP Capable
- Flexible Pinout Options
応用
- Engine starter
- Turn signal lights
- Cruise control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | FET Type | P-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 7A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1258 pF @ 25 V | Power Dissipation (Max) | 3.2W (Ta), 21W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Supplier Device Package | 8-WDFN (3.3x3.3) | Package / Case | WDFN-8 |
Base Product Number | NVTFS5116 | Manufacturer | onsemi |
Product Category | MOSFET | REACH | Details |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 14 A | Rds On - Drain-Source Resistance | 52 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 25 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 21 W |
Channel Mode | Enhancement | Series | NVTFS5116PL |
Brand | onsemi | Configuration | Single |
Forward Transconductance - Min | 11 S | Product Type | MOSFET |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Unit Weight | 0.001043 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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