PMV100EPAR
10V to 3.2V threshold at 250uA for the ROHS compliant PMV100EPAR MOSFET
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部品番号 : PMV100EPAR
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パッケージ/ケース : TO-236-3
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ブランド : Nexperia USA Inc.
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : PMV100EPAR データシート (PDF)
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Series : PMV100EPA
概要 PMV100EPAR
The PMV100EPAR stands out as a top choice for designers seeking a reliable and space-efficient P-channel enhancement mode FET. Its small SOT23 package allows for easy integration into compact electronic designs, while the advanced Trench MOSFET technology ensures optimal performance and efficiency in various applications
主な特長
- Low on-resistance and high voltage tolerance
- Silicon MOSFET technology for improved efficiency
- Enhanced thermal conductivity and reduced heat generation
- Compact design with minimal space requirements
応用
- LED driver
- Power supply
- Load driver
- Communication interface
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | TrenchMOS™ | Product Status | Active |
| FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 130mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 616 pF @ 30 V |
| Power Dissipation (Max) | 710mW (Ta), 8.3W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive | Qualification | AEC-Q101 |
| Mounting Type | Surface Mount | Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | Base Product Number | PMV100 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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