• packageimg
packageimg

Q4006L4

These triacs have a voltage rating of 400 volts, a current rating of 6 amps, and require a trigger current of 25-25-25 milliamps

在庫：6,865

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください Q4006L4 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 Q4006L4

The Sensitivetype devices featured in this series guarantee precise gate control in Quadrants I & IV, which is essential for digital control circuitry. In comparison, the Standardtype devices are typically triggered from the AC line in Quadrants I & III. For applications requiring high dv/dt capability, the Alternistortype devices are the best choice as they operate in quadrants I, II, & III

主な特長

  • Economical and compact package
  • Fully isolated to prevent interference
  • Durable and long-lasting performance
  • Minimal maintenance required

応用

  • Smooth light dimming
  • Perfect for power tools
  • Top commutation performance

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Package Bulk Product Status Discontinued at Digi-Key
Triac Type Standard Voltage - Off State 400 V
Current - On State (It (RMS)) (Max) 6 A Voltage - Gate Trigger (Vgt) (Max) 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm) 65A, 80A Current - Gate Trigger (Igt) (Max) 25 mA
Current - Hold (Ih) (Max) 50 mA Configuration Single
Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Through Hole
Package / Case TO-220-3 Isolated Tab Supplier Device Package TO-220 Isolated Tab
Base Product Number Q4006

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

STB30NF10T4

STB30NF10T4

N-channel 100-volt MOSFET with 0.038 ohm resistance and 35-amp current capability, packaged in D2PAK format, featuring low gate charge
CM200DY-13T

CM200DY-13T

Power Transistor IGBT
NSS1C200LT1G

NSS1C200LT1G

PNP Bipolar Junction Transistor (BJT) designed for General Purpose Applications with a Maximum Voltage Rating of 100V and Current Rating of 2A
FDS7788

FDS7788

SO-8 package small signal Si MOSFET with 18000mA, 30V
SI4190ADY-T1-GE3

SI4190ADY-T1-GE3

Vishay SI4190ADY-T1-GE3 N-channel MOSFET Transistor, 18.4 A, 100 V, 8-Pin SOIC
IXTA02N450HV

IXTA02N450HV

High-Voltage Power MOSFET rated at 4500 volts and 200 milliamps
IRFR2405TRPBF

IRFR2405TRPBF

This product features N-channel TO-252-2 (DPAK) MOSFETs capable of operating at 55 volts and carrying currents of up to 56 amperes
IXFN80N50P

IXFN80N50P

MOSFET with a 500V voltage rating and a maximum current capacity of 66A
MTP23P06VG

MTP23P06VG

High current Power MOSFET rated at 23 Amps and 60 Volts
MDD5N40RH

MDD5N40RH

3.4 A, 400 V, 3-Pin DPAK: MagnaChip MDD5N40RH N-channel MOSFET Transistor