• packageimg
packageimg

SBC857CDW1T1G

Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

在庫：9,748

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください SBC857CDW1T1G このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 SBC857CDW1T1G

With its compact SOT-363/SC-88 package, the SBC857CDW1T1G Dual PNP Bipolar Transistor is specifically engineered for low power surface mount applications. This versatile transistor is perfectly suited for a wide range of general-purpose amplifier applications, making it an excellent choice for electronics designers looking for reliable and efficient components to enhance their designs

主な特長

  • FPGA-based Design for Customization and Flexibility
  • AES-256 Encryption with Secure Boot and Firmware Features
  • Series 70 Microcontrollers Support with Enhanced Performance
  • Power Management Control via I2C Interface

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V Power - Max 380mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case SOT-363-6
Supplier Device Package SC-88/SC70-6/SOT-363 Base Product Number SBC857
Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 650 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 380 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series BC856B
Brand onsemi Continuous Collector Current - 100 mA
DC Collector/Base Gain hfe Min 220 DC Current Gain hFE Max 475
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Unit Weight 0.000265 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

PMPB27EP

PMPB27EP

30V 6.1A 6-Pin EP Trans MOSFET
IRG4PC30KD

IRG4PC30KD

IRG4PC30KD IGBT 28A TO247
2SC4301

2SC4301

Single Element, High Power Transistor
NVTFS5C454NLWFTAG

NVTFS5C454NLWFTAG

40V N-channel power MOSFET for automotive applications
CM100DY-13T

CM100DY-13T

IGBT Modules with standard dual-type T-series
IXFH88N30P

IXFH88N30P

TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
SD5400CY

SD5400CY

SOIC-14 N-Channel MOSFET, Small Signal, 0.05A Drain Current, 20V Voltage Rating, Silicon Material
FQA24N50F

FQA24N50F

The FQA24N50F is a 500V N-channel MOSFET designed for rail applications, featuring a 24A current capacity and a TO-3PN package
IXFH10N100

IXFH10N100

247AD ROHS MOSFETs
RW1C025ZPT2CR

RW1C025ZPT2CR

Small Signal Field-Effect Transistor with 2.5A I(D) and 20V, P-Channel