SGP02N120
Infineon SGP02N120 IGBT Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.115 | $2.12 |
| 10 | $1.831 | $18.31 |
| 30 | $1.653 | $49.59 |
| 100 | $1.471 | $147.10 |
| 500 | $1.389 | $694.50 |
| 1000 | $1.353 | $1,353.00 |
在庫：9,997
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : SGP02N120
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パッケージ/ケース : TO-220-3
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Brand : Infineon
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Components Classification : Single IGBTs
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日付シート : SGP02N120 データシート (PDF)
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Series : SGP02N120
概要 SGP02N120
The SGP02N120 Silicon Carbide power MOSFET transistor from Infineon Technologies is a high-performance device suitable for various high-power applications. With a voltage rating of 1200V, a current rating of 2A, and a power rating of 200W, this MOSFET is a reliable choice for motor drives, solar inverters, and power supplies
主な特長
- Ruggedized for harsh environments tested
- High-speed switching for precise control
- Low thermal resistance ensured
応用
- Versatile and multifunctional
- Easy to install and operate
- Enhances performance efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-220-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 3.1 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 6.2 A |
| Pd - Power Dissipation | 62 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | SGP02N120 |
| Brand | Infineon Technologies | Continuous Collector Current Ic Max | 6.2 A |
| Height | 9.25 mm | Length | 10 mm |
| Product Type | IGBT Transistors | Factory Pack Quantity | 500 |
| Subcategory | IGBTs | Width | 4.4 mm |
| Part # Aliases | SGP2N12XK SP000683106 SGP02N120XKSA1 | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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