SI2343CDS-T1-GE3
SI2343CDS-T1-GE3 features a P-channel design and a 30-volt rating
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.347 | $0.35 |
10 | $0.306 | $3.06 |
30 | $0.289 | $8.67 |
100 | $0.266 | $26.60 |
500 | $0.221 | $110.50 |
1000 | $0.214 | $214.00 |
在庫:8,403
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : SI2343CDS-T1-GE3
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パッケージ/ケース : SOT23-3
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : SI2343CDS-T1-GE3 データシート (PDF)
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Series : SI2343CDS
概要 SI2343CDS-T1-GE3
For engineers and designers looking for a reliable MOSFET for power management and switching applications, the SI2343CDS-T1-GE3 offers impressive performance and reliability. With P-channel transistor polarity, a continuous drain current of -5.9A, and a drain-source voltage of -30V, this MOSFET is well-suited for a wide range of electronic devices and circuits. Its low on-resistance of 0.037ohm and a maximum power dissipation of 2.5W ensure efficient operation and thermal stability. The SOT-23 package with 3 pins allows for easy integration into compact designs, while the wide operating temperature range of -55°C to 150°C guarantees reliable performance in diverse conditions. With an MSL rating for lead-free soldering processes, the SI2343CDS-T1-GE3 MOSFET is a versatile and dependable choice for modern electronic designs
![SI2343CDS-T1-GE3 SI2343CDS-T1-GE3](/files/uploads/product/b/07ae7123-b942-4d65-248b-08dbb33edd15.webp)
主な特長
- - Standard feature
- - 13.6 nC gate charge
- - 2.5 W power dissipation
- - -55°C ~ 150°C (TJ) operating temperature
- - 0.050717 oz unit weight
- - TrenchFET® series
応用
["Load Switch ", "Notebook Adaptor Switch ", "DC/DC Converter"]仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 45 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 8 ns |
Product Type | MOSFET | Rise Time | 10 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 18 ns |
Typical Turn-On Delay Time | 8 ns | Part # Aliases | SI2343CDS-T1-BE3 SI2343CDS-GE3 |
Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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