SKW07N120
SKW07N120 ROHS compliant IGBTs with a power rating of 125W
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $10.132 | $10.13 |
200 | $3.921 | $784.20 |
500 | $3.783 | $1,891.50 |
1000 | $3.715 | $3,715.00 |
在庫:6,289
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : SKW07N120
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パッケージ/ケース : TO-247-3
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Brand : Infineon
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Components Classification : Single IGBTs
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日付シート : SKW07N120 データシート (PDF)
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Series : SKW07N120
概要 SKW07N120
The SKW07N120 power MOSFET transistor is a versatile solution for high voltage and high-speed switching applications. With its 1200V drain-source voltage rating, it is well-suited for demanding tasks such as power supplies, motor control, and inverters. The 7A continuous drain current rating and low 1.2 ohm on-resistance ensure efficient power conversion, making it an attractive choice for power electronic designs
主な特長
- Direct copper bonded Al2O3 ceramic substrate
- Low switching losses
- High thermal conductivity
- Easy to install and maintain
応用
- Lighting fixtures
- Welding tools
- Switching devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | SKW07N120 | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 16.5 A | Height | 20.95 mm |
Length | 15.9 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 240 | Subcategory | IGBTs |
Width | 5.3 mm | Part # Aliases | SKW07N120XK SP000012569 SKW07N120FKSA1 |
Unit Weight | 1.340411 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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