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STD86N3LH5

Trans MOSFET N-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R

数量 単価(USD) 合計金額
1 $0.837 $0.84
10 $0.707 $7.07
30 $0.640 $19.20
100 $0.575 $57.50
500 $0.537 $268.50
1000 $0.516 $516.00

在庫：7,116

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください STD86N3LH5 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 STD86N3LH5

The STD86N3LH5 from Stmicroelectronics is a top-of-the-line N-channel MOSFET tailored for automotive applications with its AEC-Q101 qualification. It boasts a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 80A, making it a perfect fit for high-power automotive systems. Its surface mount design enables easy integration into circuit boards, while its low on-resistance (Rds(On)) at a test voltage of 10V ensures minimal power loss during operation. With a maximum gate-source threshold voltage of 1.8V, the STD86N3LH5 promises reliable switching behavior in automotive environments. Furthermore, this MOSFET is Rohs compliant, demonstrating its compliance with strict environmental standards for automotive components

主な特長

  • Fault-tolerant system architecture
  • Hot-swappable modules available
  • Improved system availability
  • Enhanced system maintainability

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 5 mOhms Vgs - Gate-Source Voltage - 22 V, + 22 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 14 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 70 W Channel Mode Enhancement
Qualification AEC-Q101 Series STD86N3LH5
Brand STMicroelectronics Configuration Single
Fall Time 10.8 ns Height 2.4 mm
Length 6.6 mm Product Type MOSFET
Rise Time 14 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 23.6 ns Typical Turn-On Delay Time 6 ns
Width 6.2 mm Unit Weight 0.011640 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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