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STF16N60M6

MOSFET N-channel 600 V, 0.260 Ohm typ 12 A MDmesh M6 Power MOSFET

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概要 STF16N60M6

Discover the next level of power semiconductor technology with the STF16N60M6, a high-performance SJ MOSFET powered by STMicroelectronics' cutting-edge MDmesh™ M6 technology. This innovative device combines superior RDS(on)* area improvement with best-in-class switching behavior, delivering unmatched efficiency and reliability for a variety of applications. With its user-friendly design and seamless integration, the MDmesh M6 technology offers a hassle-free experience that maximizes overall system performance and efficiency

主な特長

  • Robust surge withstand capability
  • High isolation voltage
  • Low noise operation
  • Fault-tolerant design

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 320 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4.75 V Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 25 W Channel Mode Enhancement
Tradename MDmesh Series Mdmesh M6
Brand STMicroelectronics Configuration Single
Fall Time 6.8 ns Product Type MOSFET
Rise Time 7.6 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 19.8 ns Typical Turn-On Delay Time 13 ns
Unit Weight 0.068784 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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