STW19NM50N
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247 Tube
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.649 | $1.65 |
| 10 | $1.433 | $14.33 |
| 30 | $1.299 | $38.97 |
| 100 | $1.161 | $116.10 |
| 500 | $1.100 | $550.00 |
| 1000 | $1.074 | $1,074.00 |
在庫：8,150
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : STW19NM50N
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パッケージ/ケース : TO-247-3
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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日付シート : STW19NM50N データシート (PDF)
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Series : STW19NM50N
概要 STW19NM50N
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
主な特長
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STW19NM50N | Part Life Cycle Code | Active |
| Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-247 |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
| Avalanche Energy Rating (Eas) | 208 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500 V | Drain Current-Max (Abs) (ID) | 14 A |
| Drain Current-Max (ID) | 14 A | Drain-source On Resistance-Max | 0.25 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110 W | Pulsed Drain Current-Max (IDM) | 56 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Manufacturer | STMicroelectronics |
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - Continuous Drain Current | 14 A | Rds On - Drain-Source Resistance | 250 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 34 nC | Minimum Operating Temperature | - |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 110 W |
| Channel Mode | Enhancement | Tradename | MDmesh |
| Series | STW19NM50N | Brand | STMicroelectronics |
| Fall Time | 17 ns | Product Type | MOSFET |
| Rise Time | 16 ns | Factory Pack Quantity | 600 |
| Subcategory | MOSFETs | Transistor Type | N-Channel |
| Type | MDmesh II Power MOSFET | Typical Turn-Off Delay Time | 61 ns |
| Typical Turn-On Delay Time | 12 ns | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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