STW24N60DM2
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $2.935 | $2.94 |
10 | $2.575 | $25.75 |
30 | $2.361 | $70.83 |
100 | $2.145 | $214.50 |
500 | $2.046 | $1,023.00 |
1000 | $2.001 | $2,001.00 |
在庫:8,244
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : STW24N60DM2
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パッケージ/ケース : TO-247-3
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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日付シート : STW24N60DM2 データシート (PDF)
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Series : STW24N60DM2
概要 STW24N60DM2
Elevate your power management solutions with the STW24N60DM2, a groundbreaking Power MOSFET that combines advanced FDmesh II Plus™ technology with a fast-recovery body diode. Engineered using MDmesh II Plus™ low Qg technology, this MOSFET delivers unparalleled on-resistance and gate charge characteristics, making it an ideal fit for high efficiency converters. Whether used in bridge topologies or ZVS phase-shift converters, the STW24N60DM2 promises superior performance and reliability in demanding applications
主な特長
- Improved thermal resistance and junction temperature rating
- Low output capacitance and charge
- Robust design against electrical overstress
- Avalanche-tested for reliable performance
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STW24N60DM2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Avalanche Energy Rating (Eas) | 180 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 18 A | Drain-source On Resistance-Max | 0.2 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 72 A | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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