STW35N65M5
Robust N-Channel MOSFET transistor for power managemen
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部品番号 : STW35N65M5
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パッケージ/ケース : TO-247-3
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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日付シート : STW35N65M5 データシート (PDF)
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Series : STW35N65M5
概要 STW35N65M5
N-Channel 650 V 27A (Tc) 160W (Tc) Through Hole TO-247-3
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STW35N65M5 | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | STMICROELECTRONICS |
Part Package Code | TO-247 | Package Description | FLANGE MOUNT, R-PSFM-T3 |
Pin Count | 3 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 800 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 27 A | Drain Current-Max (ID) | 27 A |
Drain-source On Resistance-Max | 0.098 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 160 W |
Pulsed Drain Current-Max (IDM) | 108 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | Matte Tin (Sn) |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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