• packageimg
packageimg

STW50N65DM2AG

MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET

在庫：5,342

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください STW50N65DM2AG このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 STW50N65DM2AG

The STW50N65DM2AG is a high-voltage N-channel Power MOSFET that is a crucial component in the MDmesh DM2 fast-recovery diode series. This MOSFET is designed to provide very low recovery charge (Qrr) and time (trr), in addition to low RDS(on), making it a suitable choice for the most demanding high-efficiency converters. It is particularly well-suited for bridge topologies and ZVS phase-shift converters due to its impressive performance

主な特長

  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 38 A
Rds On - Drain-Source Resistance 87 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 70 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename MDmesh
Series STW50N65DM2AG Brand STMicroelectronics
Configuration Single Fall Time 10.5 ns
Height 5.15 mm Length 20.15 mm
Product Power MOSFETs Product Type MOSFET
Rise Time 21 ns Factory Pack Quantity 600
Subcategory MOSFETs Transistor Type 1 N-Channel
Type High Voltage Typical Turn-Off Delay Time 89 ns
Typical Turn-On Delay Time 22.5 ns Width 15.75 mm
Unit Weight 0.211644 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

MMUN2235LT1G

MMUN2235LT1G

Digital BJT 3-Pin SOT-23 Transistor
NVMFS5C426NWFAFT1G

NVMFS5C426NWFAFT1G

NVMFS5C426NWFAFT1G: N-channel MOSFET, capable of handling 40 volts, 235 amperes, with a resistance of 1.3 milliohms
SI7842DP-T1-E3

SI7842DP-T1-E3

MOSFET, DUAL N CH, 30V, 6.3A, POWERPAKSO; Transistor Polarity:Dual N Channel + S
2N3767

2N3767

Bipolar Transistors - BJT Power BJT
NVTR01P02LT1G

NVTR01P02LT1G

With a gate threshold voltage of 1.25V and a typical leakage current of 250uA, NVTR01P02LT1G is suitable for low-power applications
APT65GP60JDQ2

APT65GP60JDQ2

Insulated Gate Bipolar Transistor with 130A I(C) and 600V V(BR)CES
SIRA00DP-T1-GE3

SIRA00DP-T1-GE3

Vishay SIRA00DP-T1-GE3 N-channel MOSFET Transistor
AOD2610

AOD2610

10A, 60V N-Type MOSFET in DPAK Package with 3 Pins (2+Tab) on Tape and Reel
2SB1226

2SB1226

2SB1226 by Sanyo: PNP Darlington Transistor, 3A, 100V, HFE:1500, TO-220ML Package
IXEN60N120

IXEN60N120

IGBT Transistors rated at 60 Amps and 1200 Volts