T810-600B-TR
TRIAC 600V 8A(RMS) 84A 3-Pin(2+Tab) DPAK T/R
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.312 | $0.31 |
10 | $0.267 | $2.67 |
30 | $0.248 | $7.44 |
100 | $0.225 | $22.50 |
500 | $0.181 | $90.50 |
1000 | $0.175 | $175.00 |
在庫:9,363
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : T810-600B-TR
-
パッケージ/ケース : TO-252-3
-
Brand : STMicroelectronics
-
Components Classification : TRIACs
-
日付シート : T810-600B-TR データシート (PDF)
-
Series : T810
概要 T810-600B-TR
In summary, the T810-600B-TR product is a reliable and efficient option for a variety of applications requiring AC switching. With its versatility, high commutation performance, and voltage insulated tab feature, it stands out as a top choice for professionals seeking quality components for their projects
主な特長
- On-state resistance, RDON 20 Ω to 30 Ω
- Repetitive surge current, IFSM 10 A to 15 A
- Gate trigger voltage, VGT ±5 V to ±15 V
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Triac Type | Logic - Sensitive Gate |
Voltage - Off State | 600 V | Current - On State (It (RMS)) (Max) | 8 A |
Voltage - Gate Trigger (Vgt) (Max) | 1.3 V | Current - Non Rep. Surge 50, 60Hz (Itsm) | 80A, 84A |
Current - Gate Trigger (Igt) (Max) | 10 mA | Current - Hold (Ih) (Max) | 15 mA |
Configuration | Single | Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount | Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK | Base Product Number | T810 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![MMBT8099LT1G](/files/uploads/product/s/1d9bbe7fa9d44861aba8da6decb85f2e.webp)
MMBT8099LT1G
In stock, ships today
![DNBT8105-7](/img/package/sot23.jpg)
DNBT8105-7
Described as DNBT8105-7, this product is a 60-volt, 600-milliwatt NPN bipolar transistor
![FDMT800100DC](/img/package/qfn.jpg)
FDMT800100DC
With its low input capacitance and fast switching time
![FDMT800120DC](/img/package/qfn.jpg)
FDMT800120DC
Trans MOSFET N-CH Si 120V 20A 8-Pin QFN EP T/R
![FDMT80080DC](/img/package/qfn.jpg)
FDMT80080DC
Powerful and reliable device ideal for automotive and industrial systems
![FDT86113LZ](/img/package/to3.jpg)
FDT86113LZ
The FDT86113LZ transistor is an N-channel MOSFET with a 4-Pin SOT-223 package, featuring a current rating of 3
![T835H-6I](/img/package/to220.jpg)
T835H-6I
TRIAC 600V 84A 3-Pin(3+Tab) TO-220AB Insulated Tube
![APT8015JVFR](/img/package/sot.jpg)
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
![FDMT80040DC](/img/package/pqfn.jpg)
FDMT80040DC
Trans MOSFET N-CH 40V 64A 8-Pin PQFN EP T/R
![AFT05MS031GNR1](/img/package/to3.jpg)
AFT05MS031GNR1
Fuel delivery vessel
![MTI145WX100GD-SMD](/img/package/sop7.jpg)
MTI145WX100GD-SMD
Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package
![TPDV1225RG](/img/package/to3.jpg)
TPDV1225RG
TRIAC TPDV1225RG, rated at 1200V with a gate trigger voltage of 1.5V and a maximum gate current of 150mA, in a TOP 3-pin package
![MRF392](/img/product.png)
MRF392
92: Transistor designed for RF power amplification
![SLA5065](/img/package/sip.jpg)
SLA5065
SLA5065 RoHS2(Ships in 1 day) - End of life in 2015
![CLF1G0035-100](/img/package/sot6.jpg)
CLF1G0035-100
Trans FET N-CH 150V GaN HEMT 3-Pin SOT-467C
![TIM5964-35SLA](/img/product.png)
TIM5964-35SLA
Advanced semiconductor solution for demanding radio frequency demand
![ZVN3310FTA](/img/package/sot233.jpg)
ZVN3310FTA
Product ZVN3310FTA is a reel containing 3000 units of Diodes Inc
![ARF460BG](/img/package/to247.jpg)
ARF460BG
Tube packaging for ARF460BG RF power MOSFET with N-channel type and 500V maximum voltage rating
![IRGP4068D-EPBF](/img/package/to247ad.jpg)
IRGP4068D-EPBF
N-channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 600V