BSC028N06LS3G
|
Current rating: 23 A |
Infineon Technologies |
9,039 |
|
BSC009NE2LSATMA1
|
OptiMOS technology enables improved switching performance and reduced power los |
Infineon |
6,303 |
|
BSC011N03LSIATMA1
|
Low Voltage Trench MOSFET |
Infineon Technologies |
8,641 |
|
BSC014N03LSGATMA1
|
30V, 34A MOSFET suitable for power control and switching |
Infineon |
7,453 |
|
BSC014N03MSGATMA1
|
High-performance N-channel Transistor suitable for general-purpose switching and amplification applications |
Infineon |
9,372 |
|
BSC014NE2LSIATMA1
|
This Infineon MOSFET is suitable for a wide range of high-performance application |
Infineon Technologies |
7,987 |
|
BSC015NE2LS5IATMA1
|
High-reliability N-channel MOSFET with V, Ω@A performance and RoHS complianc |
Infineon Technologies |
5,143 |
|
BSC016N03LSGATMA1
|
High-performance MOSFET for reliable power contro |
Infineon Technologies |
8,037 |
|
BSC019N02KSGAUMA1
|
Robust and reliable solution for motor control, power supplies, and more |
Infineon Technologies |
6,901 |
|
BSC019N04NSGATMA1
|
Optimized MOSFET design for demanding power electronics applications, providing precise control and fast response |
Infineon |
6,911 |
|
BSC020N03LSGATMA1
|
Product BSC020N03LSGATMA1 is a N-channel power MOSFET with a voltage rating of 30V and a maximum current capacity of 28A |
Infineon Technologies |
4,360 |
|
BSC0302LSATMA1
|
MOSFET TRENCH >=100V |
Infineon Technologies |
6,230 |
|
BSC030N04NSGATMA1
|
High-reliability and high-voltage N-Ch MOSFET for automotive, industrial and consumer electronic |
Infineon |
5,262 |
|
BSC031N06NS3GATMA1
|
8-pin TDSON EP packaged N-channel MOSFET transistor suitable for high-power applications with a rated current of 100A and voltage of 60V |
Infineon Technologies |
3,620 |
|
BSC034N03LSGATMA1
|
OptiMOS 3 BSC034N03LSGATMA1 MOSFET offers efficient power management solutions with its N-channel design |
Infineon Technologies |
6,410 |
|
BSC046N02KSGAUMA1
|
Low-on-resistance transistor for high-performance designs |
Infineon Technologies |
7,651 |
|
BSC040N10NS5SCATMA1
|
MOSFET TRENCH >=100V |
Infineon Technologies |
6,105 |
|
BSC0500NSIATMA1
|
MOSFET TRENCH <= 40V |
Infineon Technologies |
9,059 |
|
BSC0501NSIATMA1
|
Compact TDSON-package enables easy integration into complex syste |
Infineon |
9,447 |
|
BSC042NE7NS3GATMA1
|
Robust construction with thermal shutdown for safe operation in harsh environment |
Infineon |
5,458 |
|
BSC072N04LDATMA1
|
MOSFET TRENCH <= 40V |
Infineon Technologies |
6,244 |
|
BSC050N04LSGATMA1
|
N-channel power MOSFET with high voltage and current ratings |
Infineon |
8,121 |
|
BSC052N03LSATMA1
|
Low-loss switching transistor for industrial contr |
Infineon |
6,233 |
|
BSC054N04NSGATMA1
|
Ideal for motor control and DC-DC converter desig |
Infineon |
9,613 |
|
BSC060P03NS3EGATMA1
|
Tape and reel packaged power MOSFET with P-channel configuration, 30V maximum voltage, and 17 |
Infineon Technologies |
5,895 |
|
BSC061N08NS5ATMA1
|
BSC061N08NS5ATMA1 - 80V N-channel MOSFET rated for 82A current, featuring an 8-pin TDSON EP package, supplied in tape and reel format |
Infineon Technologies |
7,355 |
|
BSC079N10NSGATMA1
|
High-speed switching transistor suitable for power electronic applications |
Infineon Technologies |
6,250 |
|
BSC080N12LSGATMA1
|
High-power switching device for robust applications |
Infineon Technologies |
5,229 |
|
BSC0805LSATMA1
|
Reliable and efficient power switching device for demanding circuit |
Infineon Technologies |
8,922 |
|
BSC080N03MSGATMA1
|
Suitable for use in automotive, industrial automation, and aerospace industrie |
Infineon Technologies |
7,955 |
|
BSC084P03NS3GATMA1
|
Automotive-grade 8-pin TDSON EP Transistor MOSFET |
Infineon Technologies |
6,719 |
|
BSC0904NSIATMA1
|
Compact and robust device for efficient power managemen |
Infineon |
6,313 |
|
BSC090N03MSGATMA1
|
High voltage, high current device perfect for industrial automation, smart grid infrastructure, and renewable energy system |
Infineon |
6,215 |
|
BSC110N06NS3GATMA1
|
OptiMOS 3 MOSFET designed for N-channel operation, capable of handling up to 60 volts and 50 amperes of current, housed in a TDSON-8 package |
Infineon Technologies |
8,578 |
|
BSC120N03LSGATMA1
|
High-performance OptiMOS 3 transistor with 30V voltage rating |
Infineon Technologies |
6,509 |
|
BSC12DN20NS3GATMA1
|
Advanced Trans-MOSFET technology for superior speed and efficienc |
Infineon |
6,813 |
|
BSC159N10LSFGATMA1
|
High-performance MOSFET for reliable power contro |
Infineon |
8,282 |
|
BSC150N03LDGATMA1
|
V, A, OptiMOS technology for reliable power conversion |
Infineon |
6,634 |
|
BSC120N12LSGATMA1
|
Reliable power switching for industrial and automotive use |
Infineon Technologies |
5,440 |
|
BSC16DN25NS3GATMA1
|
An 8-pin TDSON EP-packaged N-channel MOSFET transistor |
Infineon Technologies |
5,886 |
|
BSC196N10NSGATMA1
|
This MOSFET, designated as BSC196N10NSGATMA1, boasts a current rating of 100A and voltage rating of 30V, with a PG-TDSON-8 packaging |
Infineon Technologies |
6,786 |
|
BSC265N10LSFGATMA1
|
100V N-Channel MOSFET |
Infineon Technologies |
5,949 |
|
BSC22DN20NS3GATMA1
|
Robust and efficient switching device suitable for a variety of application |
Infineon |
5,553 |
|
IPC100N04S51R7ATMA1
|
Compact, high-performance N-channel MOSFET for wide-range voltage contr |
Infineon Technologies |
6,781 |
|
IPC100N04S52R8ATMA1
|
High-Performance Automotive Transistor with N-Channel, 40V Voltage, 100A Current, 8-Pin TDSON EP Package |
Infineon Technologies |
5,781 |
|
IPC100N04S5L1R1ATMA1
|
Robust and versatile N-channel power MOSFET for various industries, boasting high-speed switching and low loss characteristics |
Infineon Technologies |
7,383 |
|
IAUC120N04S6N006ATMA1
|
Advanced MOSFET Technology Enables High-Speed, Reliable Switchi |
Infineon Technologies |
6,992 |
|
IAUC120N04S6N010ATMA1
|
Product IAUC120N04S6N010ATMA1 is a N-channel MOSFET with a voltage rating of 40V, a current rating of 150A, and a power dissipation of 150W |
Infineon Technologies |
9,404 |
|
IAUC24N10S5L300ATMA1
|
Reliable and robust current sense amplifier for industrial automation application |
Infineon Technologies |
9,008 |
|
IAUC45N04S6N070HATMA1
|
Transistor MOSFET with N-channel configuration |
Infineon Technologies |
4,626 |
|