BSC014N03MSGATMA1
High-performance N-channel Transistor suitable for general-purpose switching and amplification applications
在庫:9,372
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSC014N03MSGATMA1
-
パッケージ/ケース : TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : BSC014N03MSGATMA1 データシート (PDF)
-
Series : BSC014N03MS-G
概要 BSC014N03MSGATMA1
N-Channel 30 V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TDSON-8 | Tradename | OptiMOS |
Brand | Infineon Technologies | Height | 1.27 mm |
Length | 5.9 mm | Product Type | MOSFET |
Subcategory | MOSFETs | Width | 5.15 mm |
Part # Aliases | BSC014N03MS G SP000394681 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSP315PH6327XTSA1](/files/uploads/product/s/ebd9f8bebc2d4ce3bf45948f9fbebd2b.webp)
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
![BSC0702LS](/files/uploads/product/s/dd7f090a47eb413fb8d477d80afa4d7f.webp)
BSC0702LS
This MOSFET has a low on-state resistance of 2.3mΩ at 10V, 50A and a threshold voltage of 2.3V at 49uA
![BSM50GP60](/files/uploads/product/s/c53226944c6141b3b9e5045b0301ef7d.webp)
BSM50GP60
High-power transistor for demanding applications
![BSC010N04LS6ATMA1](/img/package/son8.jpg)
BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
![BSC010N04LSATMA1](/img/package/son8.jpg)
BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
![BSC010N04LSIATMA1](/img/package/son8.jpg)
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
![BSC010NE2LSATMA1](/img/package/son8.jpg)
BSC010NE2LSATMA1
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V
![BSC011N03LSATMA1](/img/package/son8.jpg)
BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
![BSC014N04LSIATMA1](/img/package/son8.jpg)
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
![BSC014N06NSATMA1](/img/package/son8.jpg)
BSC014N06NSATMA1
High-power TDSON-8 MOSFET with N-channel 60V 100A
![DN2625DK6-G](/img/package/dfn8.jpg)
DN2625DK6-G
Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP Tray
![SI7942DP-T1-E3](/img/package/power33.jpg)
SI7942DP-T1-E3
MOSFET Array Transistor featuring Dual N-Channel, 100V Voltage Capacity, 3
![SUD50P04-09L-E3](/img/package/dpak2.jpg)
SUD50P04-09L-E3
P-Channel 40 Volt MOSFET with a maximum operating temperature of 175 degrees Celsius, identified as SUD50P04-09L-E3
![BFR92PE6327HTSA1](/img/package/sot23.jpg)
BFR92PE6327HTSA1
NPN Bipolar SMT RF Transistor, BFR92-P SOT-23
![GA200SA60UP](/img/package/sot.jpg)
GA200SA60UP
600V N-channel transistor module
![KSA1015GRTA](/img/package/to92.jpg)
KSA1015GRTA
BJT PNP Epitaxial Transistor Bipolar Transistors
![NVF2955T1G](/img/package/sot223.jpg)
NVF2955T1G
Featuring a -60V voltage rating and a maximum current of 2A, NVF2955T1G is a P-channel MOSFET transistor housed in a 3-pin SOT-223 package."
![2SCR553P5T100](/img/package/sot89.jpg)
2SCR553P5T100
Small-signal transistor
![IXFN80N50P](/files/uploads/product/s/68473c7d94b94a3ab3ed64c02c87ef62.webp)
IXFN80N50P
MOSFET with a 500V voltage rating and a maximum current capacity of 66A
![BC847BPDW1T1G](/img/package/sc70.jpg)
BC847BPDW1T1G
BC847BPDW1T1G Bipolar RF Transistor NPN PNP 45 V 100 MHz 380 mW 100 mA 150 hFE