BSC159N10LSFGATMA1
High-performance MOSFET for reliable power contro
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $2.591 | $2.59 |
200 | $1.035 | $207.00 |
500 | $1.000 | $500.00 |
1000 | $0.982 | $982.00 |
在庫:8,282
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSC159N10LSFGATMA1
-
パッケージ/ケース : TDSON-8
-
ブランド : INFINEON
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : BSC159N10LSFGATMA1 データシート (PDF)
-
Series : BSC159N10LSF-G
概要 BSC159N10LSFGATMA1
N-Channel 100 V 9.4A (Ta), 63A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TDSON-8 | Tradename | OptiMOS |
Brand | Infineon Technologies | Height | 1.27 mm |
Length | 5.9 mm | Product Type | MOSFET |
Subcategory | MOSFETs | Width | 5.15 mm |
Part # Aliases | BSC159N10LSF G SP000379614 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSP315PH6327XTSA1](/files/uploads/product/s/ebd9f8bebc2d4ce3bf45948f9fbebd2b.webp)
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
![BSC0702LS](/files/uploads/product/s/dd7f090a47eb413fb8d477d80afa4d7f.webp)
BSC0702LS
This MOSFET has a low on-state resistance of 2.3mΩ at 10V, 50A and a threshold voltage of 2.3V at 49uA
![BSM50GP60](/files/uploads/product/s/c53226944c6141b3b9e5045b0301ef7d.webp)
BSM50GP60
High-power transistor for demanding applications
![BSC010N04LS6ATMA1](/img/package/son8.jpg)
BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
![BSC010N04LSATMA1](/img/package/son8.jpg)
BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
![BSC010N04LSIATMA1](/img/package/son8.jpg)
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
![BSC010NE2LSATMA1](/img/package/son8.jpg)
BSC010NE2LSATMA1
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V
![BSC011N03LSATMA1](/img/package/son8.jpg)
BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
![BSC014N04LSIATMA1](/img/package/son8.jpg)
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
![BSC014N06NSATMA1](/img/package/son8.jpg)
BSC014N06NSATMA1
High-power TDSON-8 MOSFET with N-channel 60V 100A
![FQD10N20CTM](/img/package/dpak.jpg)
FQD10N20CTM
Compliant with ROHS regulations and suitable for a variety of applications
![IXTP140P05T](/img/package/to220.jpg)
IXTP140P05T
-50V rated MOSFET with 140 Amps capacity
![BSM200GA170DN2](/img/product.png)
BSM200GA170DN2
The BSM200GA170DN2 is classified as an IGBT module, engineered for use in circuits requiring a voltage tolerance of 1
![T405-600H](/img/package/ipak.jpg)
T405-600H
TRIAC 600V 4A(RMS) 31A 3-Pin(3+Tab) IPAK Tube
![2SD2351T106V](/img/package/sot323.jpg)
2SD2351T106V
50V 150mA NPN BJT transistors
![IRF3205ZPBF](/img/package/to220ab.jpg)
IRF3205ZPBF
Tube Packaging of N-Channel Silicon MOSFET with 55V Voltage Rating and 110A Current Rating
![AUIRFP4004](/img/package/to247.jpg)
AUIRFP4004
Trans MOSFET N-CH Si 40V 350A Automotive 3-Pin(3+Tab) TO-247AC Tube
![IXTT30N60L2](/img/package/to268.jpg)
IXTT30N60L2
N-type MOSFET capable of handling 30 amps and up to 600 volts, in a TO-268 package
![IRF7204PBF](/img/package/soic8.jpg)
IRF7204PBF
IRF7204PBF MOSFET: P Channel Device capable of Handling 20V and 5
![RSQ035P03TR](/img/package/sot236.jpg)
RSQ035P03TR
The power dissipation of RSQ035P03TR is 1.25W at 2.5V and 1mA