|
2N6507G
|
2N6507G is an SCR (Silicon Controlled Rectifier) boasting a robust 400V voltage rating and a capable 25A RMS current handling capacity |
Littelfuse |
6,541 |
|
|
BTA16-800CW3G
|
TRIAC 800V 170A 3-Pin(3+Tab) TO-220AB |
Littelfuse Inc. |
7,636 |
|
|
IRLZ24PBF
|
Describing IRLZ24PBF |
VISHAY |
8,621 |
|
|
IRL640PBF
|
Trans MOSFET N-CH 200V 17A |
VISHAY |
4,442 |
|
|
IRL520PBF
|
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) Vishay Siliconix IRL520PBF N-channel MOSFET Transistor, 9.2 A, 100 V, 3-Pin TO-220AB |
VISHAY |
5,053 |
|
|
IRFBE20PBF
|
Product Description: 800V 1.8A N Channel MOSFET with 6.5Ω resistance |
VISHAY |
5,930 |
|
|
IRFB9N65APBF
|
N-channel MOSFET,IRFB9N65A 8.5A 650V |
VISHAY |
4,886 |
|
|
IRF9Z34PBF
|
Trans MOSFET P-CH 60V 18A |
VISHAY |
6,796 |
|
|
IRF9620PBF
|
P-Channel Silicon Metal-oxide Semiconductor FET with a resistance of 1.5 ohms |
VISHAY |
5,170 |
|
|
IRF634PBF
|
Power MOSFET, N-Type, 250V, HEXFET |
VISHAY |
8,038 |
|
|
TS820-600T
|
TS820-600T: A semiconductor device known as a Thyristor SCR |
Stmicroelectronics |
8,466 |
|
|
T405-600T
|
600V 31A 3-Pin(3+Tab) TO-220AB Thyristor TRIAC in Tube Packaging - Rail/Tube |
Stmicroelectronics |
6,997 |
|
|
T435-800T
|
The T435-800T product is a Triac rated for 800V and capable of managing currents of up to 4A |
Stmicroelectronics |
9,591 |
|
|
BTB10-600BWRG
|
A 50mA 600V dual SCR TO-220AB TRIACs ROHS, model BTB10-600BWRG, is available |
Stmicroelectronics |
5,346 |
|
|
STPS20L45CT
|
Schottky diode with minimal voltage drop |
Stmicroelectronics |
5,990 |
|
|
STPS30150CT
|
Diode Schottky 150V 30A 3-Pin(3+Tab) TO-220AB Tube |
Stmicroelectronics |
9,565 |
|
|
BTB12-600BWRG
|
Thyristor Triac 600V 12A, PK |
Stmicroelectronics |
5,897 |
|
|
BTB16-800CWRG
|
BTB16-800CWRG is a 16 Amp 800 Volt Triacs product |
Stmicroelectronics |
8,809 |
|
|
BTB16-800BWRG
|
BTB16-800BWRG: Triacs designed for applications requiring 16 amps and 600 volts |
Stmicroelectronics |
5,928 |
|
|
TYN612RG
|
The TYN612RG is a ROHS-compliant TRIAC with a maximum current rating of 30mA and 15mA and a voltage rating of 600V |
Stmicroelectronics |
8,071 |
|
|
TYN625RG
|
TYN625RG - Single-Way Thyristor, 600V, 40mA, ITO-220AB-3 Package, ROHS Compliant |
Stmicroelectronics |
6,013 |
|
|
TYN640RG
|
TYN640RG is a thyristor with a voltage rating of 600V, capable of handling up to 40A of maximum forward current and 25A of continuous forward current |
Stmicroelectronics |
7,253 |
|
|
SCT2120AF
|
Enhance your driving experience with efficient audio processing. (71 chars) |
rohm semiconductor |
6,449 |
|
|
STPS3045CTC
|
Rectifier STPS3045CTC Power Schottky |
ST |
5,346 |
|
|
SR1690
|
Compact and efficient Schottky diode with high surge capability and low forward voltage drop |
Taiwan Semiconductor |
6,513 |
|
|
SR2090
|
High-speed switching diode for efficient power conversion |
Taiwan Semiconductor |
6,353 |
|
|
MBR1640CT
|
MBR1640CT is a dual common cathode Schottky diode featuring a 40V voltage rating, capable of conducting 16A forward current and 8A reverse current |
SMC Diode Solutions |
8,487 |
|
|
IRG4BC40F
|
Power semiconductor device |
Infineon Technologies AG |
5,584 |
|
|
ESAC25-02D
|
200V 10A 3-Pin TO-220AB Diode Switching |
EIC Semiconductor |
8,684 |
|
|
2N6403
|
Robust and efficient component for high-voltage switching need |
onsemi |
5,704 |
|
|
2N6508
|
High-power switching device ideal for motor control and power supply systems |
onsemi |
6,140 |
|
|
2SK1119(F)
|
A 1000V, 4A N-channel MOSFET enclosed in a TO-220AB package |
Toshiba |
6,870 |
|
|
IRG4BC30KPBF
|
IGBT 600V 28A 100W TO220AB |
International Rectifier |
6,811 |
|
|
IRGB4064DPBF
|
The IRGB4064DPBF by Infineon, an IGBT component capable of handling currents up to 20A and voltages of 600V, housed in a TO-220AB package |
International Rectifier |
5,974 |
|
|
TK100E10NE
|
N-channel Silicon MOSFET with 100V voltage and 100A current in TO-220AB Tube |
Toshiba |
7,429 |
|
|
G20100CTW
|
TO-220 AB 20A Schottky Diode 3-Pin |
Diodes Incorporated |
6,402 |
|
|
UES2403
|
Rectifying the flow of current |
Microchip Technology |
9,141 |
|
|
MTP1N60E
|
N-Channel Power MOSFET with 600V voltage rating and 1A current rating |
onsemi |
7,057 |
|
|
MTP1N100E
|
channel to-220ab mtp1n100e |
onsemi |
9,266 |
|
|
IRG4BC30KD
|
Maximum power dissipation of 100W |
Infineon Technologies AG |
9,038 |
|
|
IRG4BC30FD
|
Bipolar Transistor with Insulated Gate, N-Channel, 31A Current Rating, 600V Breakdown Voltage |
Infineon Technologies AG |
9,139 |
|
|
G30100CTW
|
Schottky Barrier Diodes |
Diodes Incorporated |
8,925 |
|
|
IRSF3010
|
IRSF3010 is a high-performance N channel power MOSFET capable of handling up to 40W of power |
INFINEON |
4,212 |
|
|
IRL2703
|
Tube Packaging with 24A Continuous Drain Current |
INFINEON |
5,436 |
|
|
AUIRF3710Z
|
AUIRF3710Z is an N-channel MOSFET that comes in a TO220AB package, featuring a voltage rating of 100V and a current rating of 59A |
International Rectifier |
5,801 |
|
|
TPH3208PS
|
High-Power 650V Gallium Nitride FET in TO220 Encapsulation, 20 Amperes |
Transphorm |
7,835 |
|
|
IRF3305
|
Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Power |
INFINEON |
6,246 |
|
|
IRFB33N15DPBF
|
N-channel MOSFET with 150V voltage rating, 56 milliohm on-resistance, and 60 nanocoulombs gate charge |
International Rectifier |
4,111 |
|
|
IRF3708PBF
|
High-performance IRF3708PBF MOSFET with 30V voltage, 62A current, 12mOhm resistance, and 24nC charge |
International Rectifier |
6,924 |
|
|
SUP60N06-18-E3
|
N-Channel MOSFETs 60V 60A 120W |
vishay |
6,490 |
|
