|
IRGP20B120UD-EP
|
Trans IGBT Chip N-CH 1200V 40A 300W 3-Pin(3+Tab) TO-247AD Tube |
International Rectifier |
6,590 |
|
|
IRG7PH46UPBF
|
Trans IGBT Chip N-CH 1200V 130A 469W 3-Pin(3+Tab) TO-247AC Tube |
Infineon Technologies |
7,344 |
|
|
IRG7PH35UD1PBF
|
Trans IGBT Chip N-CH 1200V 50A 179W 3-Pin(3+Tab) TO-247AC Tube |
Infineon Technologies |
5,226 |
|
|
RGS80TSX2DHRC11
|
1200V 40A FIELD STOP TRENCH IGBT |
Rohm Semiconductor |
9,101 |
|
|
APT70GR120B2
|
Trans IGBT Chip N-CH 1200V 160A 961W 3-Pin(3+Tab) T-MAX Tube |
Microchip Technology |
6,486 |
|
|
IPW65R048CFDA
|
MOSFET N-Ch 650V 63.3A TO247-3 |
INFINEON |
7,493 |
|
|
DPG30C200HB
|
Rectifier Diode Switching 200V 15A 35ns 3-Pin(3+Tab) TO-247AD Tube |
IXYS |
9,988 |
|
|
IRG7PH35UPBF
|
Infineon IRG7PH35UPBF IGBT, 55 A 1200 V, 3-Pin TO-247AC |
International Rectifier |
9,650 |
|
|
IRGP6660DPBF
|
Infineon IRGP6660DPBF IGBT, 95 A 600 V, 3-Pin TO-247AC |
Infineon Technologies |
8,444 |
|
|
RGS80TS65DHRC11
|
IGBT Transistors IGBT |
Rohm Semiconductor |
8,682 |
|
|
IXFH150N17T
|
Silicon-based Power Field-Effect Transistor capable of handling 150A I(D) current and 175V |
Ixys |
9,433 |
|
|
FDH15N50
|
15A 500V UltraFET N-Channel MOSFET |
Onsemi |
5,389 |
|
|
FCH20N60
|
N-Channel SuperFET FCH20N60 600V MOSFET |
Onsemi |
7,199 |
|
|
C3D20060D
|
TO-247 Schottky Diode with Silicon Carbide technology, 600V voltage rating, 20A current, Temp Unit |
Wolfspeed |
8,494 |
|
|
IRG4PF50WPBF
|
N-Ch 900V 51A TO247AC Transistor |
Infineon |
6,533 |
|
|
IRG4PC60FPBF
|
00V Fast 1-8 kHz Discrete IGBT in a TO-247AC package, TO247-3 |
Infineon |
6,862 |
|
|
IRG4PC40SPBF
|
IGBTs 160W 60A 600V TO-247AC ROHS |
Infineon |
7,712 |
|
|
RFG70N06
|
TO-247 N-Channel Power MOSFET |
Onsemi |
6,227 |
|
|
DSEP15-12CR
|
Rectifier Diode Switching 1.2KV 15A 15ns 2-Pin(2+Tab) ISOPLUS 247 |
IXYS |
5,214 |
|
|
DSEC60-12A
|
Rectifier Diode Switching 1.2KV 30A 60ns 3-Pin(3+Tab) TO-247AD |
IXYS |
8,010 |
|
|
IKW30N60DTP
|
Trans IGBT Chip N-CH 600V 53A 200W 3-Pin(3+Tab) TO-247 Tube |
Infineon Technologies |
6,219 |
|
|
CLA60MT1200NHR
|
TRIAC Diode 1200V 66A(RMS) 410A 3-Pin(3+Tab) ISO 247 Tube |
IXYS |
7,890 |
|
|
CSD20030D
|
Schottky Diodes & Rectifiers |
Wolfspeed, Inc. |
8,042 |
|
|
FCH47N60-F085
|
MOSFET 600V, 47A, SuperFET |
onsemi |
7,478 |
|
|
FGH30S150P
|
IGBT with shorted-anode, 1500 volts, 30 amps |
Onsemi |
7,848 |
|
|
FGY40T120SMD
|
Trans IGBT Chip N-CH 1200V 80A 882W 3-Pin(3+Tab) Power TO-247 Tube |
Onsemi |
4,446 |
|
|
IRFP460A
|
MOSFET N-CH 500V 20A TO247-3 |
Vishay |
4,227 |
|
|
IRFP9240
|
Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC |
Onsemi |
2,618 |
|
|
HGTG30N60A4D
|
Trans IGBT Chip N-CH 600V 70A 463W 3-Pin(3+Tab) TO-247 Tube |
Onsemi |
6,460 |
|
|
IMW65R039M1HXKSA1
|
High-performance power electronics component for efficient energy conversio |
Infineon |
9,879 |
|
|
IMW65R083M1HXKSA1
|
Next-generation mosfet technology for maximum system efficienc |
Infineon |
5,214 |
|
|
IPW60R075CPFKSA1
|
Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247 Tube |
Infineon |
6,694 |
|
|
IPW60R070C6FKSA1
|
High-power transistor for demanding applicatio |
Infineon |
5,070 |
|
|
IPW60R099CPFKSA1
|
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube |
Infineon |
9,799 |
|
|
IPW65R035CFD7AXKSA1
|
N-Channel MOSFET Transistor |
Infineon |
6,425 |
|
|
IPW65R050CFD7AXKSA1
|
Advanced MOSFET technology for reliable and precise current control in high-voltage application |
Infineon |
6,916 |
|
|
IPW65R115CFD7AXKSA1
|
N-Channel MOSFET Transistor |
Infineon |
9,809 |
|
|
IPW65R095C7XKSA1
|
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube |
Infineon |
6,377 |
|
|
IRFP264
|
MOSFET 38 Amps 250V 0.075 Rds |
Ixys |
5,712 |
|
|
IRFP240
|
MOSFET N-CH 200V 20A TO-247AC |
Onsemi |
5,066 |
|
|
IXFH16N80P
|
IXFH16N80P is an N-type MOSFET designed for high-power applications |
Littelfuse |
5,430 |
|
|
IXFR140N20P
|
IXFR140N20P is a N-channel power MOSFET with a voltage rating of 200V and a maximum current handling capability of 90A |
Littelfuse |
4,520 |
|
|
IXFR200N10P
|
Trans MOSFET N-CH Si 100V 133A 3-Pin(3+Tab) ISOPLUS 247 |
IXYS |
7,780 |
|
|
IXFR26N100P
|
IXFR26N100P MOSFET - engineered for demanding tasks, supports currents up to 26 Amps and voltages up to 1000V, with a mere 0.39 ohms of on-resistance |
Littelfuse |
6,446 |
|
|
IXFX21N100Q
|
High Performance N-Channel MOSFET with 21A Discharge Capacity |
Littelfuse |
5,434 |
|
|
IXTH50N25T
|
Power MOSFET with Trench Gate for Improved Performance |
Littelfuse |
6,745 |
|
|
IXTH60N10
|
Compact and reliable, ideal for space-constrained design |
IXYS |
5,281 |
|
|
RJH60F5BDPQ-A0#T0
|
Advanced IGBT chip suitable for high-frequency AC-DC conversion and power electronics design |
Renesas |
6,993 |
|
|
SPW15N60C3FKSA1
|
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-247 Tube |
Infineon |
6,283 |
|
|
SPW32N50C3FKSA1
|
Trans MOSFET N-CH 560V 32A 3-Pin(3+Tab) TO-247 Tube |
Infineon |
6,986 |
|
