BSC012N06NSATMA1
MOSFET TRENCH 40<-<100V
在庫：8,587
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSC012N06NSATMA1
-
パッケージ/ケース : TSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : BSC012N06NSATMA1 データシート (PDF)
-
Series : BSC012N06NS
概要 BSC012N06NSATMA1
Infineon's BSC012N06NSATMA1 Mosfet offers exceptional performance with a maximum operating temperature of 175 degrees Celsius and a power dissipation of 214W. The Rds(On) Test Voltage of 10V and Gate Source Threshold Voltage Max of 2.8V ensure efficient operation and precise control in your circuits. This N-Channel Mosfet is suitable for a wide range of applications, from power supplies to motor control systems. Trust in Infineon's reputation for quality and innovation with the BSC012N06NSATMA1 Mosfet
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSON-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 1.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | Qg - Gate Charge | 143 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 214 W | Channel Mode | Enhancement |
| Tradename | OptiMOS 5 | Series | BSC012N |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 31 ns | Forward Transconductance - Min | 85 S |
| Product Type | MOSFET | Rise Time | 15 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 54 ns |
| Typical Turn-On Delay Time | 11 ns | Part # Aliases | BSC012N06NS SP001645312 |
| Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
BSC0702LS
This MOSFET has a low on-state resistance of 2.3mΩ at 10V, 50A and a threshold voltage of 2.3V at 49uA
BSM50GP60
High-power transistor for demanding applications
BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
BSC010NE2LSATMA1
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V
BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
BSC014N06NSATMA1
High-power TDSON-8 MOSFET with N-channel 60V 100A
STB21NM60N
The STB21NM60N N-CHANNEL MOSFET
CM600DXL-24S
High-power IGBT Semiconductor
SI1013R-T1-GE3
MOSFET P Trench 20V 350mA 450mV @ 250uA（Min） 1.2 Ω @ 350mA,4.5V SC-75A RoHS
DNBT8105-7
Described as DNBT8105-7, this product is a 60-volt, 600-milliwatt NPN bipolar transistor
IRFP460APBF
The IRFP460APBF is a N-Channel HEXFET MOSFET with a voltage rating of 500V
UF3C120040K4S
SiC FETs optimized for fast switching
IRFR4105ZPBF
N-channel HEXFET MOSFET with 24.5mOhms and 18nC capacitance
DECASMDC050F/60-2
PTC Resettable Fuse 0.55A(hold) 1.1A(trip) 60VDC 10A 1W 0.1s 0.2Ohm SMD Solder Pad 2018 T/R
IXTK210P10T
Trench power MOSFETs for efficient performance
RSQ035P03TR
The power dissipation of RSQ035P03TR is 1.25W at 2.5V and 1mA