• packageimg
packageimg

BSC034N06NSATMA1

High Voltage Power MOSFET"

在庫：5,191

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください BSC034N06NSATMA1 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 BSC034N06NSATMA1

The BSC034N06NSATMA1 Power MOSFET, manufactured by Infineon Technologies, is a high-quality semiconductor device designed for use in high-current applications. With a 60V drain-source voltage rating and a continuous drain current of 85A, this MOSFET is well-suited for power supplies, motor control, and battery management systems. Its low on-state resistance of 3.4 mΩ minimizes power losses, thereby improving overall system efficiency. Additionally, the device boasts a fast switching speed and low gate charge, making it suitable for applications that require precise control and high switching frequencies. The compact TO-252-3 package allows for easy mounting and heatsink attachment, offering convenience in installation. Moreover, the BSC034N06NSATMA1 is equipped with built-in protection features, such as overcurrent and overtemperature protection, ensuring safe and reliable operation, even in demanding environments

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 3.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V Qg - Gate Charge 33 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 74 W Channel Mode Enhancement
Tradename OptiMOS Series OptiMOS 5
Brand Infineon Technologies Configuration Single
Fall Time 5 ns Forward Transconductance - Min 46 S
Height 1.27 mm Length 5.9 mm
Product Type MOSFET Rise Time 5 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 9 ns Width 5.15 mm
Part # Aliases BSC034N06NS SP001067010 Unit Weight 0.003683 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

IXTK22N100L

IXTK22N100L

channel 1000V MOSFET with a current rating of 22A
FS30R06XE3

FS30R06XE3

The FS30R06XE3 is a high-performance N-channel IGBT module, housed in a 15-pin EASY1-1 package, suitable for various power control needs
NTMFS4C06NT1G

NTMFS4C06NT1G

NTMFS4C06N - Power-efficient semiconductor device for amplifying electronic signals
RU1C001UNTCL

RU1C001UNTCL

Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits
2SC5712(TE12L,F)

2SC5712(TE12L,F)

Transistors - BJT NPN with 100V Voltage Rating and 3A Collector Current
APT65GP60L2DQ2G

APT65GP60L2DQ2G

Advanced IGBT Technology
IRF7822

IRF7822

30V N-Channel 18A Power MOSFET
ZXMN6A08E6TA

ZXMN6A08E6TA

SOT23-6-packaged N-Channel MOSFET rated for up to 60V and capable of handling currents of 3.5A
IRF6691

IRF6691

N-Channel Power MOSFET with 20V Voltage Rating and 32A Current Rating
IRF7478PBF

IRF7478PBF

MOSFET with N-channel configuration