BSS138W H6327
N-Channel Trans MOSFET with 60V Voltage Rating and 0.28A Current
在庫:9,159
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部品番号 : BSS138W H6327
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パッケージ/ケース : SOT323-3
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ブランド : INFINEON
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : BSS138W H6327 データシート (PDF)
概要 BSS138W H6327
主な特長
- Rds(on)= 3.5Ω @ Vgs= 10V, Id= 0.22A
- Rds(on)= 6.0Ω @ Vgs= 4.5V, Id= 0.22A
- High density cell design for extremely low Rds(on)
- Rugged and Reliable
- Compact industry standard SOT-323 surface mount package
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-323-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 280 mA | Rds On - Drain-Source Resistance | 2.1 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 8.2 ns | Forward Transconductance - Min | 0.12 S |
Height | 0.9 mm | Length | 2 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 3 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 6.7 ns | Typical Turn-On Delay Time | 2.2 ns |
Width | 1.25 mm | Part # Aliases | BSS138WH6327XT SP000924068 BSS138WH6327XTSA1 |
Unit Weight | 0.000212 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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