BSZ086P03NS3EGATMA1
This MOSFET, part of the OptiMOS P3 series, is a P-channel device rated for -30V and 13
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部品番号 : BSZ086P03NS3EGATMA1
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パッケージ/ケース : TSDSON-8
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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日付シート : BSZ086P03NS3EGATMA1 データシート (PDF)
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Series : BSZ086P03NS3E-G
概要 BSZ086P03NS3EGATMA1
The BSZ086P03NS3EGATMA1 is a cutting-edge silicon carbide Schottky diode crafted by ROHM Semiconductor, specially designed for power management systems. With an impressive reverse voltage rating of 650V and a forward current capacity of 3A, this diode offers exceptional performance in a wide range of applications. Its high-speed switching capabilities and low power loss characteristics make it an ideal choice for power supplies, inverters, and motor control units
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TSDSON-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 40 A |
Rds On - Drain-Source Resistance | 6.5 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 3.1 V | Qg - Gate Charge | 57.5 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 69 W | Channel Mode | Enhancement |
Series | BSZ086P03 | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 8 ns |
Forward Transconductance - Min | 30 S | Height | 1.1 mm |
Length | 3.3 mm | Product Type | MOSFET |
Rise Time | 46 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 35 ns | Typical Turn-On Delay Time | 16 ns |
Width | 3.3 mm | Part # Aliases | BSZ086P03NS3E G SP000473016 |
Unit Weight | 0.001367 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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