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BSZ120P03NS3GATMA1

Transistor P-channel MOSFET with 30V voltage rating and 11A current capacity in TSDSON EP package for Tape and Reel packaging

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概要 BSZ120P03NS3GATMA1

With the BSZ120P03NS3GATMA1, Infineon introduces a highly innovative product from its OptiMOS family, featuring p-channel power MOSFETs that excel in both quality and performance. Meeting the highest standards in power system design, this product boasts impressive specifications in on-state resistance and figure of merit characteristics, ensuring exceptional reliability and efficiency. Its enhancement mode and compatibility with normal, logic, or super logic level further enhance its versatility and suitability for a diverse range of applications, including consumer electronics, DC-DC converters, eMobility, motor control, notebooks, and onboard chargers. Meanwhile, its avalanche rating, Pb-free lead plating, and RoHS compliance demonstrate its commitment to environmental sustainability

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TSDSON-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 9 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 3.1 V Qg - Gate Charge 45 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 52 W Channel Mode Enhancement
Series BSZ120P03 Brand Infineon Technologies
Configuration Single Fall Time 5 ns
Forward Transconductance - Min 22 S Height 1.1 mm
Length 3.3 mm Product Type MOSFET
Rise Time 11 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 23 ns Typical Turn-On Delay Time 13 ns
Width 3.3 mm Part # Aliases BSZ120P03NS3 G SP000709736
Unit Weight 0.001367 oz

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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