FDH44N50
UniFETTM N-Channel Power MOSFET rated at 500 Volts and 44 Amps with a low on-resistance of 120 Milliohms
在庫:4,382
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FDH44N50
-
パッケージ/ケース : TO-247-3
-
ブランド : Onsemi
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : FDH44N50 データシート (PDF)
-
Series : FDH44N50
概要 FDH44N50
Ideal for power converter applications like power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, the FDH44N50 UniFET MOSFET delivers exceptional efficiency and reliability. Its tailored design allows for superior performance in various scenarios, making it a versatile option for designers looking to optimize their systems
主な特長
- Fast switching speed with low noise level
- Robust construction and durable performance
- Improved thermal dissipation and cooling performance
- Compact package for reduced space requirements
- Low power consumption for extended battery life
- Excellent voltage regulation for stable power supply
応用
- Perfect for all your needs
- Highly versatile product
- Great for various uses
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 44 A |
Rds On - Drain-Source Resistance | 120 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 108 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 750 W | Channel Mode | Enhancement |
Series | FDH44N50 | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 79 ns |
Forward Transconductance - Min | 11 S | Height | 20.82 mm |
Length | 15.87 mm | Product Type | MOSFET |
Rise Time | 84 ns | Factory Pack Quantity | 450 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 16 ns | Width | 4.82 mm |
Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FDC6506P
type 30V 1.8A 6-pin package tape and reel
FDMA3023PZ
High-performance Transistor Array
FDMS7692
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R
FDMS86101
Power MOSFET with N-channel configuration, designed for operation at 100V voltage, capable of carrying currents up to 12
FDMS8660AS
Trans MOSFET N-CH Si 30V 28A T/R
FDS2734
Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R
FDS8858CZ
Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC T/R
FDS9934C
The N-channel MOSFET features a higher current rating compared to the P-channel, providing flexibility for different circuit designs
FDC3601N
Small form factor N-channel MOSFET Transistor with a 1A current rating and 100V voltage rating
FDS86140
Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC T/R
2N7002DWA-7
Metal-oxide Semiconductor FET N-Channel Small Signal Field-Effect Transistor
BSZ440N10NS3GATMA1
The BSZ440N10NS3GATMA1 from Infineon is a MOSFET with a voltage rating of 100V
BUP314D
BUP314D Insulated Gate Bipolar Transistor, N-Channel, TO-218, 42A I(C), 1200V V(BR)CES
SUP85N15-21-E3
Power N-channel MOSFET capable of handling up to 150 volts and 85 amps, housed in a TO-220AB package
IXFK420N10T
N-channel MOSFET transistor, 100V, 420A, TO-264 package
IRFR320TRPBF
N-Channel Silicon MOSFET with 1.8ohm resistance
2SK3018-TP
N-Channel Field-Effect Transistor
BSP125H6327XTSA1
600V 120mA N-Channel MOSFET
2N3772G
2N3772G power transistor with NPN configuration
DNBT8105-7
Described as DNBT8105-7, this product is a 60-volt, 600-milliwatt NPN bipolar transistor