FDMA910PZ
Trans MOSFET P-CH 20V 9.4A 6-Pin WDFN EP T/R
在庫:6,498
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- 365日の品質保証
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部品番号 : FDMA910PZ
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDMA910PZ データシート (PDF)
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Series : FDMA910PZ
概要 FDMA910PZ
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
主な特長
- Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A
- Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A
- Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A
- Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
- HBM ESD protection level > 2.8k V typical (Note 3)
- Free from halogenated compounds and antimony oxides
- RoHS Compliant
応用
- Mobile Handsets
- Portable Navigation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | FDMA910PZ | Product Status | Active |
FET Type | P-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | Rds On (Max) @ Id, Vgs | 20mOhm @ 9.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
Vgs (Max) | ±8V | Input Capacitance (Ciss) (Max) @ Vds | 2805 pF @ 10 V |
Power Dissipation (Max) | 2.4W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 6-MicroFET (2x2) |
Package / Case | MicroFET-6 | Base Product Number | FDMA910 |
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 9.4 A |
Rds On - Drain-Source Resistance | 20 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V | Qg - Gate Charge | 29 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.4 W | Channel Mode | Enhancement |
Tradename | PowerTrench | Brand | onsemi / Fairchild |
Configuration | Single | Height | 0.75 mm |
Length | 2 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Width | 2 mm |
Unit Weight | 0.001411 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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