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FDMS4D0N12C

High-power transistor for advanced switching application

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  • 90日間のアフター保証
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概要 FDMS4D0N12C

The FDMS4D0N12C N-Channel MV MOSFET is a top-of-the-line product that boasts advanced PowerTrench® technology. Utilizing Shielded Gate technology, this MOSFET has been meticulously designed to deliver exceptional performance. With a focus on minimizing on-state resistance, it also maintains superior switching capabilities, setting a new standard in the industry. Additionally, its best-in-class soft body diode ensures reliable and efficient operation, making it a standout choice for any application requiring a high-performance N-Channel MV MOSFET

主な特長

  • Improved Gate Control for Precise Current Regulation
  • Enhanced Thermal Performance for High-Power Applications
  • Fully Compliant with International Safety and Regulatory Standards

応用

  • Can be used in many ways.
  • Works well for different needs.
  • Highly adaptable for various tasks.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series PowerTrench® Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 120 V Current - Continuous Drain (Id) @ 25°C 18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 370A Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6460 pF @ 60 V
Power Dissipation (Max) 2.7W (Ta), 106W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6)
Package / Case PQFN-8 Base Product Number FDMS4
Manufacturer onsemi Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 120 V Id - Continuous Drain Current 114 A
Rds On - Drain-Source Resistance 4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 82 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 106 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 12 ns Forward Transconductance - Min 144 S
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 25 ns
Unit Weight 0.004308 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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