FDMS86104
Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R
在庫:6,944
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部品番号 : FDMS86104
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パッケージ/ケース : PQFN EP
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDMS86104 データシート (PDF)
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Series : FDMS86104
概要 FDMS86104
This N-Channel MOSFET is produced using an advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
主な特長
- Shielded Gate MOSFT Technology
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
応用
- This product is general usage and suitable for many different applications.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | FDMS86104 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 923 pF @ 50 V |
Power Dissipation (Max) | 2.5W (Ta), 73W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 8-PQFN (5x6) |
Package / Case | Power-56-8 | Base Product Number | FDMS86 |
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | REACH | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 16 A | Rds On - Drain-Source Resistance | 24 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.9 V |
Qg - Gate Charge | 6.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 73 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Brand | onsemi / Fairchild | Configuration | Single |
Forward Transconductance - Min | 18 S | Height | 1.1 mm |
Length | 6 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 5 mm |
Unit Weight | 0.002610 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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