HGT1S10N120BNST
Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.682 | $2.68 |
| 10 | $2.310 | $23.10 |
| 30 | $2.076 | $62.28 |
| 100 | $1.837 | $183.70 |
| 500 | $1.730 | $865.00 |
| 800 | $1.683 | $1,346.40 |
在庫：8,703
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : HGT1S10N120BNST
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パッケージ/ケース : D2PAK-3
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Brand : Onsemi
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Components Classification : Single IGBTs
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日付シート : HGT1S10N120BNST データシート (PDF)
概要 HGT1S10N120BNST
In a competitive market where performance is key, the HGT1S10N120BNST stands out as a reliable and efficient choice for high voltage switching applications. Its innovative NPT design sets it apart from conventional IGBTs, offering superior performance and longevity in demanding environments. Whether you're working on a solar inverter project or a UPS system, this IGBT is sure to meet and exceed your expectations, making it a crucial component for any high voltage application
主な特長
- High-Quality Audio Signal
- Precision Clock Control
- Fine Pitch Soldering Capability
- Rugged and Robust Construction
- Precise Timing Control
- Durable and Reliable Performance
応用
- Standby Power
- Battery Backup
- Power Reserve
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418AJ |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 800 |
| ON Target | N | V(BR)CES Typ (V) | 1200 |
| IC Max (A) | 17 | VCE(sat) Typ (V) | 2.45 |
| Eoff Typ (mJ) | 0.8 | Eon Typ (mJ) | 0.32 |
| Gate Charge Typ (nC) | 100 | Short Circuit Withstand (µs) | 8 |
| EAS Typ (mJ) | 80 | PD Max (W) | 298 |
| Co-Packaged Diode | No | Pricing ($/Unit) | $2.0639Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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