MJH16006A
MJH16006A: Description of Bipolar Transistors - BJT ROHS
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $7.426 | $7.43 |
| 200 | $2.875 | $575.00 |
| 500 | $2.773 | $1,386.50 |
| 1000 | $2.724 | $2,724.00 |
在庫：9,424
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : MJH16006A
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パッケージ/ケース : TO-218-3
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Brand : Onsemi
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Components Classification : Single Bipolar Transistors
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日付シート : MJH16006A データシート (PDF)
概要 MJH16006A
Bipolar (BJT) Transistor NPN 500 V 8 A 125 W Through Hole SOT-93 (TO-218)
主な特長
- Collector–Emitter Voltage — VCEV = 1000 Vdc
- Fast Turn–Off Times
- 80 ns Inductive Fall Time — 100°C (Typ)
- 120 ns Inductive Crossover Time — 100°C (Typ)
- 800 ns Inductive Storage Time — 100°C (Typ)
- 100°C Performance Specified for:
- Reverse–Biased SOA with Inductive Load
- Switching Times with Inductive Loads
- Saturation Voltages
- Leakage Currents
- Extended FBSOA Rating Using Ultra–fast Rectifiers
- Extremely High RBSOA Capability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Packaging | Bulk | Part Status | Active |
| Transistor Type | NPN | Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 500 V | Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 150µA | DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 8A, 5V |
| Power - Max | 125 W | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-218-3 |
| Supplier Device Package | SOT-93 (TO-218) |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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