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HGTG40N60A4

3-Pin TO-247 N-Type Insulated Gate Bipolar Transistor Chip

在庫：6,330

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概要 HGTG40N60A4

The HGTG40N60A4 is a perfect blend of the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. It is designed to cater to high voltage switching applications that operate at high frequencies, where minimizing conduction losses is of utmost importance. This IGBT is an excellent choice for fast-switching applications such as UPS and welders, where efficiency and performance are critical. With its optimized design, the HGTG40N60A4 offers unparalleled reliability and functionality, making it the go-to solution for demanding industrial applications

主な特長

  • Rapid switching speed for high power apps
  • Low on-state voltage drop design
  • Soft recovery diode for reduced stress

応用

  • High Performance
  • Energy Efficient
  • Reliable Operation

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.7 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 75 A
Pd - Power Dissipation 625 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG40N60A4
Brand onsemi / Fairchild Continuous Collector Current 75 A
Continuous Collector Current Ic Max 75 A Gate-Emitter Leakage Current +/- 250 nA
Height 20.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Width 4.82 mm
Part # Aliases HGTG40N60A4_NL Unit Weight 0.225401 oz

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    部品の品質保証: 365 日

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