HGTP7N60B3D
60W Insulated Gate Bipolar Transistors with 14A current rating and 600V voltage capability in a TO-220AB package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.933 | $2.93 |
| 200 | $1.170 | $234.00 |
| 500 | $1.131 | $565.50 |
| 1000 | $1.113 | $1,113.00 |
在庫：8,718
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : HGTP7N60B3D
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パッケージ/ケース : TO-220-3
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Brand : Onsemi
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Components Classification : Single IGBTs
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日付シート : HGTP7N60B3D データシート (PDF)
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Series : HGTP7N60B3D
概要 HGTP7N60B3D
Housed in a TO-220 package, the HGTP7N60B3D is easy to mount and provides efficient heat dissipation to prevent overheating. With a maximum junction temperature of 150°C and built-in protection against overcurrent and overtemperature conditions, this IGBT transistor offers peace of mind when it comes to the safety and longevity of your electronic systems
主な特長
- Robust package for high stress
- Low noise and electromagnetic interference
- Suitable for industrial applications
応用
- Energy-efficient
- Automotive systems
- Advanced technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-220-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.8 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 14 A |
| Pd - Power Dissipation | 60 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | HGTP7N60B3D |
| Brand | onsemi / Fairchild | Continuous Collector Current | 14 A |
| Continuous Collector Current Ic Max | 14 A | Gate-Emitter Leakage Current | +/- 100 nA |
| Height | 9.4 mm | Length | 10.67 mm |
| Product Type | IGBT Transistors | Factory Pack Quantity | 400 |
| Subcategory | IGBTs | Width | 4.83 mm |
| Part # Aliases | HGTP7N60B3D_NL | Unit Weight | 0.063493 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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