IPG20N04S4L08ATMA1
N-channel MOSFET: 40V, 20A, TDSON-8 package, OptiMOS-T2
在庫:9,153
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部品番号 : IPG20N04S4L08ATMA1
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パッケージ/ケース : TDSON-8
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Brand : Infineon Technologies
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Components Classification : FET, MOSFET Arrays
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日付シート : IPG20N04S4L08ATMA1 データシート (PDF)
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Series : IPG20N04S4L-08
概要 IPG20N04S4L08ATMA1
The Infineon Technologies IPG20N04S4L08ATMA1 power MOSFET transistor represents a cutting-edge solution for various high-power applications. Boasting a 40V drain-source voltage rating and a continuous drain current of 70A, this MOSFET offers dependable performance and efficiency. Its advanced trench semiconductor technology enhances switching speeds, thermal efficiency, and reliability, while the low on-resistance of 5.9mΩ reduces power losses. The compact TO-220 package with a lead (Pb)-free design ensures environmental friendliness and compliance with RoHS regulations, making it a top choice for energy-efficient designs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | OptiMOS-T2 | Product Status | Active |
Technology | Si | Configuration | Dual |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 20A | Rds On (Max) @ Id, Vgs | 8.2mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 22µA | Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 25V | Power - Max | 54W |
Operating Temperature | -55°C ~ 175°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Package / Case | TDSON-8 | Supplier Device Package | PG-TDSON-8-4 |
Base Product Number | IPG20N | Manufacturer | Infineon |
Product Category | MOSFET | RoHS | Details |
REACH | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 7.2 mOhms, 7.2 mOhms | Vgs - Gate-Source Voltage | - 16 V, + 16 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 39 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 54 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Brand | Infineon Technologies |
Fall Time | 20 ns, 20 ns | Height | 1.27 mm |
Length | 5.9 mm | Product Type | MOSFET |
Rise Time | 3 ns, 3 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 40 ns, 40 ns | Typical Turn-On Delay Time | 7 ns, 7 ns |
Width | 5.15 mm | Part # Aliases | IPG20N04S4L-08 SP000705576 |
Unit Weight | 0.003415 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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