IXDH20N120D1
0N120D1, 'IGBT Transistors 20 Amps 1200V', arranged alphabetically:
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $12.607 | $12.61 |
210 | $5.032 | $1,056.72 |
510 | $4.863 | $2,480.13 |
990 | $4.779 | $4,731.21 |
在庫:8,471
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXDH20N120D1
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXDH20N120D1 データシート (PDF)
概要 IXDH20N120D1
The IXDH20N120D1 dual IGBT module is a powerhouse of high power applications, with a current rating of 20A and a voltage rating of 1200V. This module is the perfect choice for high power electronic systems such as motor drives, inverters, and power supplies. Its advanced insulated gate bipolar transistor (IGBT) technology provides ease of control and high current handling capability, making it ideal for applications requiring high power and voltage levels. With a low saturation voltage and fast switching speed, the IXDH20N120D1 module ensures reduced power dissipation and improved efficiency, as well as high-frequency operation and precise control of power delivery. Additionally, built-in protective features such as overcurrent and overtemperature protection guarantee reliable and safe operation in demanding environments
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Obsolete |
IGBT Type | NPT | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 38 A | Current - Collector Pulsed (Icm) | 50 A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A | Power - Max | 200 W |
Switching Energy | 3.1mJ (on), 2.4mJ (off) | Input Type | Standard |
Gate Charge | 70 nC | Test Condition | 600V, 20A, 82Ohm, 15V |
Reverse Recovery Time (trr) | 40 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-247-3 |
Supplier Device Package | TO-247AD | Base Product Number | IXDH20 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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