IXFB70N60Q2
PLUS264-packaged N-channel MOSFET capable of handling 70 amperes at 600 volts
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $36.712 | $36.71 |
| 200 | $14.209 | $2,841.80 |
| 500 | $13.707 | $6,853.50 |
| 1000 | $13.462 | $13,462.00 |
在庫：5,332
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFB70N60Q2
-
パッケージ/ケース : TO-264-3
-
ブランド : IXYS
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : IXFB70N60Q2 データシート (PDF)
-
Series : IXFB70N60
概要 IXFB70N60Q2
N-Channel 600 V 70A (Tc) 890W (Tc) Through Hole PLUS264™
主な特長
- High Current Handling Capability
- Fast Intrinsic Diode
- Avalanche Rated
- Low RDS(ON)
- Low Package Inductance
- Advantages
- Plus 264TM Package for Clip or Spring Mounting
- High Power Density
- Easy to Mount
- Space Savings
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Q2 Class | Package | Tube |
| Product Status | Not For New Designs | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 35A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V | Power Dissipation (Max) | 890W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | PLUS264™ | Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFB70 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
MJE253G
Bipolar transistors with a current rating of 4A and a voltage rating of 100V
IRL6372PBF
International Rectifier IRL6372PBF: A dual N-channel MOSFET transistor featuring an 8
SUP85N15-21-E3
Power N-channel MOSFET capable of handling up to 150 volts and 85 amps, housed in a TO-220AB package
DRC2114E0L
DRC2114E0L Digital NPN Transistor, 100 MA, 50 V, 10 kΩ, 3-Pin Mini3 G3 B
IXBX25N250
IGBT Chip featuring Transistor for N-Channel with 2500V, 55A, 300W and 3-Pin(3+Tab) PLUS 247
KST92MTF
Product KST92MTF is a Transistor, General Purpose Bipolar (BJT), PNP type, capable of handling voltages up to 300V and currents up to 0
DMN62D1SFB-7B
Featuring a 3DFN package, this MOSFET is an N-channel type designed for operation with voltages up to 60V and currents of 410mA
ZVN4424G
Trans MOSFET N-CH 240V 0.5A Automotive 4-Pin(3+Tab) SOT-223
IRLD024PBF
Vishay IRLD024PBF N-channel MOSFET Transistor, 2.5 A, 60 V, 4-Pin HVMDIP
AT-41533
AT-41533 Bipolar Transistor for Small Signal RF Amplification