IXFH100N30X3
An N-MOSFET transistor of X3-Class
在庫:6,756
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部品番号 : IXFH100N30X3
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パッケージ/ケース : TO-247-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFH100N30X3 データシート (PDF)
概要 IXFH100N30X3
The IXFH100N30X3 MOSFETs are engineered for durability and versatility, requiring fewer snubbers and supporting both hard and soft switching power converters. Their ability to withstand challenging operating conditions, such as high voltages and fast switching speeds, sets them apart as a reliable option for demanding applications. By integrating advanced features like efficient energy dissipation and enhanced thermal management, these MOSFETs offer a comprehensive solution for power electronics design
主な特長
- Optimized for high-frequency applications
- Reduced electromagnetic radiation
- Precise control over switching times
- Improved overall system reliability
応用
- Excellent thermal performance
- Flexible power delivery
- Intelligent power control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Ultra X3 | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 300 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7660 pF @ 25 V | Power Dissipation (Max) | 480W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
Base Product Number | IXFH100 |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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