IXFH12N100Q
N-Channel power MOSFET with a maximum voltage rating of 1kV and a current rating of 12A in a TO-247AD package
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部品番号 : IXFH12N100Q
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH12N100Q データシート (PDF)
概要 IXFH12N100Q
With a comprehensive set of specifications including current ratings, voltage ratings, and power dissipation capabilities, the IXFH12N100Q MOSFET offers designers a versatile and reliable option for high-power circuit designs. Whether used in power supply units, motor drives, or other industrial applications, this N-channel MOSFET provides efficient performance and durability. The TO-247 package style ensures easy mounting and efficient heat dissipation, while the low on-state resistance and high voltage ratings make it a suitable choice for demanding environments
主な特長
- Low input current and high output current
- Fast response time and low output impedance
- Excellent noise immunity and EMI reduction
- Compact package size and easy mounting
応用
- Advanced technology
- Quick installation process
- Energy-efficient operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Q Class | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH12 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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