IXFH16N120P
Power Field-Effect Transistor 16A 1200V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $15.945 | $15.94 |
200 | $6.170 | $1,234.00 |
500 | $5.955 | $2,977.50 |
1000 | $5.847 | $5,847.00 |
在庫:5,928
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH16N120P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH16N120P データシート (PDF)
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Series : IXFH16N120
概要 IXFH16N120P
Engineers looking to enhance the performance of their power systems need look no further than the IXFH16N120P Polar™ HiPerFETs. These power semiconductors are specifically designed for phase-shift bridges motor control and UPS applications, offering a faster body diode and reduced reverse recovery time (trr) for improved efficiency. With features like low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, these HiPerFETs provide a reliable solution for demanding power electronics applications. Upgrade your power system with the superior performance and reliability of the IXFH16N120P Polar™ HiPerFETs
主な特長
- Surface Mountable Design
- Fully Wrapped Gate Emitter
- Low Saturation Current
- Reduced Electromagnetic Interference
応用
- Next-Generation Power Devices
- Smart Power Management
- Compact Power Solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Polar | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 950mOhm @ 8A, 10V | Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V | Power Dissipation (Max) | 660W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
Base Product Number | IXFH16 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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