IXFH170N10P
High current N-channel MOSFET in TO-247AD package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $3.882 | $3.88 |
| 10 | $3.801 | $38.01 |
| 30 | $3.749 | $112.47 |
| 100 | $3.696 | $369.60 |
在庫：6,878
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH170N10P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH170N10P データシート (PDF)
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Series : IXFH170N10
概要 IXFH170N10P
IXFH170N10P is a game-changer in the world of power electronics, offering an unmatched combination of low on-resistance (RDS(on)), low thermal resistance to junction temperature (RthJC), and reduced charge storage capacity (Qg). This remarkable suite of features makes it an excellent choice for applications that require high-speed switching and efficient energy conversion. Furthermore, the enhanced dv/dt capability ensures superior performance under dynamic conditions
主な特長
- Advanced Package Design
- Simplified PCB Layout
- Faster Response Time
- Higher Power Density
応用
- Highly efficient power supply
- Top-quality DC converter
- Reliable battery charger
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 198 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V | Power Dissipation (Max) | 715W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH170 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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