IXFH220N20X3
200V 220A 960W MOSFET
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $16.376 | $16.38 |
10 | $15.718 | $157.18 |
30 | $14.578 | $437.34 |
90 | $13.583 | $1,222.47 |
在庫:9,923
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH220N20X3
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パッケージ/ケース : TO-247-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFH220N20X3 データシート (PDF)
概要 IXFH220N20X3
One of the standout features of these MOSFETs is their low reverse recovery charge and time, which enables the body diodes to efficiently dissipate leftover energies during high-speed switching. This not only prevents device failure but also maximizes operational efficiency. Additionally, the IXFH220N20X3 is avalanche capable and offers superior dv/dt performance, providing a robust defense against voltage spikes and accidental turn-ons
主な特長
- Fast switching speeds for efficient energy transfer
- High current rating for demanding power applications
- Robust performance under harsh conditions ensured
- Easy installation and maintenance for reduced downtime
応用
- Precision rectification
- Compact DC-DC converters
- Audio amplification systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Ultra X3 | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 220A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.2mOhm @ 110A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V | Power Dissipation (Max) | 960W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
Base Product Number | IXFH220 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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