IXFH26N50P
High-voltage N-channel MOSFET transistor with a current rating of 26A in a TO-247AD package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $5.243 | $5.24 |
| 10 | $5.024 | $50.24 |
| 30 | $4.889 | $146.67 |
| 90 | $4.777 | $429.93 |
在庫：5,993
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFH26N50P
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXFH26N50P データシート (PDF)
概要 IXFH26N50P
In summary, the Polar™ HiPerFETs family, including the IXFH26N50P model, combines advanced technology with optimized design to provide engineers with a versatile solution for a wide range of power management applications. Whether you are designing a phase-shift bridge for motor control or an uninterruptible power supply for critical systems, the IXFH26N50P offers the performance and reliability you need to meet your project requirements. Trust in the Polar™ HiPerFETs family for your next design challenge
主な特長
- Sophisticated Algorithm
- Fast Processing Speed
- High Accuracy Results
- User-Friendly Interface
応用
- High Efficiency Power
- Supply Solution
- Clean Energy Source
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V | Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH26 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
CSD16570Q5BT
MOSFET 25V NCH NexFET Pwr MOSFET
SIA461DJ-T1-GE3
D-Source P-Type Transistor
IXFX20N120P
N-Channel MOSFET with 1.2KV Vds and 20A Id packaged in PLUS247-3
SI5475DDC-T1-GE3
Halogen free and RoHS compliant
CMF10120D
This product is a high-voltage N-channel MOSFET made from Silicon Carbide, designed for a maximum voltage of 1
CGHV96130F
Three-Pin RF Transistor
BFX85
Small signal bipolar transistors
IPW65R045C7FKSA1
Specs: N-Channel MOSFET, 650V, 46A, TO247-3 Package, CoolMOS C7
LM3046MX
BJT Transistor Array
IRFS4127TRLPBF
MOSFET N-channel 200V 72A D2PAK