IXFH50N60P3
N-Channel Power MOSFET with a voltage rating of 600V, current handling capacity of 50A, and a TO-247AD package
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部品番号 : IXFH50N60P3
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH50N60P3 データシート (PDF)
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Series : IXFH50N60
概要 IXFH50N60P3
The IXFH50N60P3 MOSFET transistor is the perfect choice for high-power applications that require efficient power delivery and fast switching speeds. With a maximum voltage rating of 600V and a continuous current of 50A, this transistor is capable of handling a wide range of demanding tasks with ease. Its low on-resistance of 0.19 ohms ensures minimal power loss, while the fully isolated TO-247 package design allows for easy mounting and superior thermal performance
主な特長
- High-speed operation
- Rapid switching times
- Low power consumption
応用
- Integrated resonant power supplies
- Efficient PFC circuits
- Robust servo control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar3™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6300 pF @ 25 V | Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
| Base Product Number | IXFH50 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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