SI3410DV-T1-GE3
Vishay SI3410DV-T1-GE3 N-channel MOSFET Transistor, 8 A, 30 V, 6-Pin TSOP
在庫:5,540
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- 365日の品質保証
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部品番号 : SI3410DV-T1-GE3
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パッケージ/ケース : TSOP-6
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SI3410DV-T1-GE3 データシート (PDF)
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Series : SI3410DV
概要 SI3410DV-T1-GE3
The TSOP-6 transistor case style allows for easy installation with its 6 pins, providing a secure connection in various electronic circuits. With an operating temperature maximum of 150°C, the SI3410DV-T1-GE3 is capable of withstanding high temperatures without compromising its performance. Additionally, this product meets MSL 1 - Unlimited standards, ensuring reliability and longevity in a variety of environments
主な特長
- Quad-Port Power Sourcing Equipment (PSE) controller
- IEEE 802.3at Type I and II compliant
- Port priority shutdown control
- Adds enhanced features for maximum design flexibility:
- Per-port current and voltage monitoring
- PoE Plus support with programmable current limits
- Multi-point detection
- Programmable power MOSFET gate drive control
- Configurable watchdog timer enables failsafe operation
- Maskable interrupt pin
- Comprehensive fault protection circuitry includes:
- Power undervoltage lockout
- Output current limit and short circuit protection
- Thermal overload detection
- Supports pin-selectable AUTO mode
- Extended operating temp range: –40 to +85 °C
- 5x7 mm 38-pin QFN package (RoHS-compliant)
- On-chip dc-dc converter enables single-rail power operation
応用
- IEEE Power Sourcing Equipment (PSE)
- Power over Ethernet (PoE) Switches
- IP Phone Systems
- Smartgrid Switches
- Ruggedized and Industrial Switches
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 8 A | Rds On - Drain-Source Resistance | 19.5 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 33 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 4.1 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Height | 1.1 mm |
Length | 3.05 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Width | 1.65 mm | Part # Aliases | SI3410DV-GE3 |
Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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