• packageimg
packageimg

IXFH52N30Q

ROHS-approved TO-247AD MOSFETs

数量 単価(USD) 合計金額
1 $28.029 $28.03
210 $11.184 $2,348.64
510 $10.810 $5,513.10
990 $10.625 $10,518.75

在庫：4,203

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IXFH52N30Q このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IXFH52N30Q

The IXFH52N30Q, part of the renowned Q-Class series, stands out as a top choice for Power MOSFET applications. Featuring low gate charge and excellent ruggedness, this HiPerFET™ device excels in both hard switching and resonant mode scenarios. Its fast intrinsic diode adds to its appeal, ensuring efficient performance across various industrial settings. Available in a selection of standard packages, including isolated types, the IXFH52N30Q caters to the diverse needs of professionals seeking high-quality Power MOSFETs with robust features and reliable operation

主な特長

  • Precise control of operating parameters
  • Sophisticated fault detection and isolation
  • Fully compliant with safety standards
  • Robustness against power surges and dips

応用

  • Reliable performance
  • Compact size
  • Cost-effective

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Package Description ,
Reach Compliance Code ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 52 A Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-247AD JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 360 W
Pulsed Drain Current-Max (IDM) 208 A Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

PBSS2515E

PBSS2515E

PBSS2515E is an NPN Bipolar Transistor with a 0.5 A 15 V rating and an HFE of 90, designed for small signal applications
IPB09N03LA

IPB09N03LA

Transistor MOSFET, N-Channel, TO-263
RSS065N06

RSS065N06

High-speed switching with G-S Protection Diode
SI4539ADY

SI4539ADY

2W power handling MOSFET with a rating of 30V and current capabilities of 5.9/4.9A
MUN5113DW1T1G

MUN5113DW1T1G

Low power consumption at 187mW
IRFS4010-7PPBF

IRFS4010-7PPBF

Advanced D2PAK package with high current handling capabilities
AON6450

AON6450

Surface Mount 8-DFN Package
SI7148DP-T1-E3

SI7148DP-T1-E3

PowerPAK-SO-8 packaging of SI7148DP-T1-E3 ensures easy surface mount installation for power applications
QS5K2TR

QS5K2TR

N Channel Dual MOSFET ROHM QS5K2TR 30V 2A 0.154 ohm TSMT Surface Mount
CM400DY-66H

CM400DY-66H

Mitsubishi power transistor module CM400DY-66H