IXFH58N20
The IXFH58N20 MOSFET is engineered for robust performance in various power circuitry
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $11.999 | $12.00 |
10 | $10.601 | $106.01 |
30 | $9.749 | $292.47 |
90 | $9.036 | $813.24 |
在庫:8,271
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部品番号 : IXFH58N20
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH58N20 データシート (PDF)
概要 IXFH58N20
Meet the IXFH58N20, a standout product in the N-Channel HiPerFET™ Standard series known for its exceptional performance and reliability. With low gate charge and excellent ruggedness, this Power MOSFET is a top choice for both hard switching and resonant mode applications. The fast intrinsic diode further enhances the efficiency of the IXFH58N20, making it a valuable asset in industrial settings. Available in a variety of standard industrial packages, including isolated types, this MOSFET series offers engineers and designers the flexibility and options they need to succeed
主な特長
- Rapid Switching Times
- High Voltage Capability
- Low ESR
応用
- Enhanced circuit efficiency
- Optimal power management
- Advanced technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 29A, 10V | Vgs(th) (Max) @ Id | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) | Package / Case | TO-247-3 |
Base Product Number | IXFH58 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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