IXFH60N65X2
MOSFET IXFH60N65X2, featuring Ultra Junction X2 technology, offers 650V voltage capacity and 60A current handling capability
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $6.917 | $6.92 |
10 | $6.606 | $66.06 |
30 | $6.415 | $192.45 |
90 | $6.256 | $563.04 |
在庫:6,538
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFH60N65X2
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パッケージ/ケース : TO-247-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFH60N65X2 データシート (PDF)
概要 IXFH60N65X2
Say goodbye to outdated MOSFET technology and hello to the future with IXFH60N65X2. These state-of-the-art devices are engineered to deliver unparalleled performance, with low on-state resistances and superior dv/dt capabilities. The innovative design not only boosts efficiency but also enhances ruggedness, ensuring that your applications run smoothly and reliably every time
主な特長
- Rapid charging capabilities
- High energy efficiency
- Compact design options
応用
- Next-gen robotics technology
- Precise servo systems
- State-of-the-art DC drives
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Ultra X2 | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6180 pF @ 25 V | Power Dissipation (Max) | 780W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
Base Product Number | IXFH60 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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