IXFK150N30P3
Power transistor with N-type channel, able to handle maximum 300 volts and 150 amps of current
在庫:4,501
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXFK150N30P3
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パッケージ/ケース : TO-264-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFK150N30P3 データシート (PDF)
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Series : IXFK150N30
概要 IXFK150N30P3
Discover the unmatched performance of the IXFK150N30P3 from the PolarP3™ HiPerFET™ product series. Ideal for voltage requirements between 300V to 600V, this semiconductor device boasts a superior Figure of Merit (FOM) derived from optimized Qg and RDS(on) characteristics. Benefit from up to a 12 percent reduction in on-state resistance (Rdson), 14 percent decrease in gate charge (Qg), and an impressive 20 percent increase in maximum power dissipation (Pd). The IXFK150N30P3 is designed for enhanced thermal efficiency, thanks to reduced chip thicknesses that contribute to a higher overall power density. Elevate your electronic designs with the exceptional performance of the IXFK150N30P3
主な特長
- High-reliability materials
- Redundant power supplies
- Silent operation mode
- Smart monitoring system
応用
- High-efficiency power supplies
- Battery charging solutions
- Precision motor controllers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 4000 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 300 V | Drain Current-Max (ID) | 150 A |
Drain-source On Resistance-Max | 0.019 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 40 pF | JEDEC-95 Code | TO-264AA |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 1300 W | Pulsed Drain Current-Max (IDM) | 375 A |
Surface Mount | NO | Terminal Finish | TIN SILVER COPPER |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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